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Epitaxial Structures For Optical Information ProcessingApplications: Superlattice Infrared Detectors

Published online by Cambridge University Press:  21 February 2011

Moses T. Asom
Moses T. Asom*
Affiliation:
AT&T Bell Laboratories, Solid State Technology Center, Breiningsville PA 18031
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Abstract

Advances in epitaxial growth techniques such as molecular beam epitaxy andmetal organic chemical vapor deposition have facilitated the formation ofhigh quality III-V heterostructures with dimensional control down to atomiclevels, with abrupt doping and near-defect-free interfaces. The flexibilityand remarkable control offered by these techniques have resulted in thefabrication of new devices based on confinement or modulation of carriers inthin III-V heterostructures. Quantum wells and superlattice based devicesare expected to be utilized in optical information processing as sources,modulators, and detectors. In this paper, we will review the generalepitaxial requirements for quantum wells and superlattices based devices,and discuss the fabrication and properties of a new class of infraredphotodetectors that employ intraband transitions in quantum wells.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 249
Copyright
Copyright © Materials Research Society 1992

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