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Study on Damage Characteristics of Fused Silica under Ion Beam Sputtering and AMP Technique

Published online by Cambridge University Press:  01 January 2024

Wanli Zhang
Affiliation:
Laboratory of Science and Technology on Integrated Logistics Support, College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan Province 410073, China
Feng Shi*
Affiliation:
Laboratory of Science and Technology on Integrated Logistics Support, College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan Province 410073, China
Ci Song
Affiliation:
Laboratory of Science and Technology on Integrated Logistics Support, College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan Province 410073, China
Ye Tian
Affiliation:
Laboratory of Science and Technology on Integrated Logistics Support, College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan Province 410073, China
Shuangpeng Guo
Affiliation:
Laboratory of Science and Technology on Integrated Logistics Support, College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan Province 410073, China
*
Correspondence should be addressed to Feng Shi; shifeng@nudt.edu.cn

Abstract

Fused silica is an optical material with excellent performance, and it is widely used in the fabrication of optics in various high-power laser systems. With the gradual improvement of laser systems, the quality of optics becomes crucial. Taking magnetorheological finishing (MRF), ion beam sputtering etching (IBSE), and advanced mitigation processing (AMP) as the means, this work focuses on exploring the damage characteristics evolution of fused silica under different techniques. In this work, IBSE technique was used to determinedly polish the optical surface after removing damage layer by MRF technique, and AMP technique was applied to etch the surface with a certain depth. Then, 10 J/cm2 (355 nm, 5 ns) laser was used to irradiate the optical surface, and the damage density of optics maintained at a low level, about 0.001/mm2, which proves that MRF, IBSE, and AMP techniques can effectively improve the laser damage resistance of optics.

Information

Type
Research Article
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Copyright
Copyright © 2022 Wanli Zhang et al.
Figure 0

Table 1: MRF parameters.

Figure 1

Table 2: IBSE parameters.

Figure 2

Table 3: Removal depth of IBSE.

Figure 3

Table 4: AMP etching depth.

Figure 4

Figure 1: Hundred Joule laser test platform.

Figure 5

Figure 2: Target spot morphology. (a) Target spot (10 mm × 10 mm). (b) Time waveform.

Figure 6

Figure 3: Laser damage density test diagram. (a) Test area: 40 mm × 40 mm square area at the center of the surface. (b) Test route: “S”- type route, sequence of laser shots: 1–16.

Figure 7

Figure 4: Detection principle.

Figure 8

Figure 5: IBSE slant etching results. (a) Slant morphology. (b) Intersecting surface profile.

Figure 9

Figure 6: Roughness results.

Figure 10

Figure 7: Roughness fitting result.

Figure 11

Figure 8: Photothermal absorption result of sample 8#.

Figure 12

Figure 9: Photothermal absorption results. (a) Photothermal signal distribution. (b) Photothermal signal evolution curve.

Figure 13

Table 5: Damage density test result.

Figure 14

Figure 10: Laser scattering test results. (a) Dark-field scattering result. (b) Defects identification result.

Figure 15

Figure 11: Laser scattering test results. (a) Dark-field scattering results. (b) Defects identification results. (c) Defects number statistics.

Figure 16

Figure 12: “Fragment” defects.

Figure 17

Figure 13: Typical laser-induced damage.

Figure 18

Figure 14: Laser scattering result after AMP etching process.

Figure 19

Figure 15: “Fragment” defects of sample 4#.