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Increase in Open-circuit Voltage and Improved Stability of Organic Solar Cells by Inserting a Molybdenum Trioxide Buffer Layer

Published online by Cambridge University Press:  31 January 2011

Hideyuki Murata
Affiliation:
murata-h@jaist.ac.jp, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, Japan
Yoshiki Kinoshita
Affiliation:
kyoshiki@jaist.ac.jp, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, Japan
Yoshihiro Kanai
Affiliation:
s0730021@jaist.ac.jp, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, Japan
Toshinori Matsushima
Affiliation:
tmatusim@jaist.ac.jp, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, Japan
Yuya Ishii
Affiliation:
Ishii.Y@jaist.ac.jp, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, Japan
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Abstract

We report the increase in open-circuit voltage (Voc) by inserting of MoO3 layer on ITO substrate to improve built-in potential of organic solar cells (OSCs). In the OSCs using 5,10,15,20-tetraphenylporphyrine (H2TPP) as a p-type material and C60 as a n-type material, the Voc effectively increased from 0.57 to 0.97 V as increasing MoO3 thickness. The obtained highest Voc (0.97 V) is consistent with the theoretical value estimated from the energy difference between the LUMO (−4.50 eV) of C60 and the HOMO (−5.50 eV) of H2TPP layer. Importantly, the enhancement in the Voc was achieved without affecting the short-circuit current density (Jsc) and the fill-factor (FF). Thus, the power conversion efficiency of the device linearly increased from 1.24% to 1.88%. We also demonstrated that a MoO3 buffer layer enhances the stability of OSCs after photo-irradiation. We have investigated the stability of OSCs using H2TPP and N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine as a p-type layer. The both devices with MoO3 layer showed improved stability. These results clearly suggest that the interface at ITO/p-type layer affects the device stability.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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