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VUV- and Soft X-Ray-Induced Optical Luminescence and X-Ray Absorption Fine Structures of Porous Silicon

Published online by Cambridge University Press:  25 February 2011

T. K. Sham ,
D. T. Jiang ,
I. Coulthard ,
J. W. Lorimer ,
X. H. Feng ,
K. H. Tan ,
S. P. Frigo ,
R. A. Rosenberg ,
D. C. Houghton  and
B. Bryskiewicz
T. K. Sham
Affiliation:
Department of Chemistry, University of Western Ontario, London, N6A 5B7, Canada
D. T. Jiang
Affiliation:
Department of Chemistry, University of Western Ontario, London, N6A 5B7, Canada
I. Coulthard
Affiliation:
Department of Chemistry, University of Western Ontario, London, N6A 5B7, Canada
J. W. Lorimer
Affiliation:
Department of Chemistry, University of Western Ontario, London, N6A 5B7, Canada
X. H. Feng
Affiliation:
Department of Chemistry, University of Western Ontario, London, N6A 5B7, Canada
K. H. Tan
Affiliation:
Department of Chemistry, University of Western Ontario, London, N6A 5B7, Canada
S. P. Frigo
Affiliation:
Synchrotron Radiation Center, University of Wisconsin-Madison, Stoughton, WI 53589
R. A. Rosenberg
Affiliation:
Advance Photon Source, Argonne National Laboratory, Argonne, IL 60439
D. C. Houghton
Affiliation:
Advance Photon Source, Argonne National Laboratory, Argonne, IL 60439
B. Bryskiewicz
Affiliation:
Institute for Microstructural Science, National Research Council, Ottawa Kl A 0R6, Canada.
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Abstract

Optical luminescence in porous silicon induced by soft X-ray and vacuum UV excitation with energies in the vicinity of the Si K-edge (1838 eV) and the Si L-edge (99 eV) has been observed. The luminescence has been used, together with total electron yield, to record X-ray absorption fine structure (XAFS) in the near-edge region of both Si edges. The near- edge spectra recorded simultaneously with either luminescence or total electron yield were compared, and the implications of these measurements for the structure of porous silicon are discussed.

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References

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