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Matrix Formation Leading to Catalyst Free Growth of GaN Nanowires

Published online by Cambridge University Press:  01 February 2011

Joshua B. Halpern ,
Gary L. Harris ,
Maoqi He ,
Piezhen Zhou  and
Christina E. Cheek
Joshua B. Halpern
Affiliation:
jhalpern@howard.edu, Howard University, Chemistry, Washington, District of Columbia, United States
Gary L. Harris
Affiliation:
gharris@msrce.howard.eduglharris1124@mac.com, Howard University, Howard Nanofabrication Facility, Washington, District of Columbia, United States
Maoqi He
Affiliation:
mqhe@msrce.howard.edu, Howard University, Howard Nanofabrication Facility, Washington, District of Columbia, United States
Piezhen Zhou
Affiliation:
pzhou@msrce.howard.edu, Howard University, Howard Nanofabrication Facility, Washington, District of Columbia, United States
Christina E. Cheek
Affiliation:
ccheek@howard.edu, Howard University, Electrical Engineering, Washington, District of Columbia, United States
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Abstract

Catalyst-free vapor-solid GaN nanowire growth occurs when ammonia flows over Ga first forming a GaN matrix, the top layer of which is composed of hexagonal platelets. Multiphase nanowire growth occurs at nanoscale nucleation sites on the GaN platelets. Lower layers of the matrix are Ga rich, upper ones are stoichiometrically GaN. Gallium for later stages of growth is sourced from the decomposition of GaN particles and Ga rich GaN. Growth temperature exerts a strong influence on nucleation site formation. Scanning electron microscopy (SEM) and Energy Dispersive Spectroscopy (EDS) was used to characterize the matrix.

Keywords

nanostructureIII-Vnitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1144: Symposium LL – Nanowires–Systhesis, Properties, Assembly and Applications , 2008 , 1144-LL03-16
Copyright
Copyright © Materials Research Society 2009

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References

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