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Fracture Property Improvements of a Nanoporous Thin Film Via Post Deposition Bond Modifications

Published online by Cambridge University Press:  01 February 2011

Jeannette M. Jacques ,
Ting Y. Tsui ,
Andrew J. McKerrow  and
Robert Kraft
Jeannette M. Jacques
Affiliation:
Silicon Technology Development, Texas Instruments Inc., Dallas, Texas 75243
Ting Y. Tsui
Affiliation:
Silicon Technology Development, Texas Instruments Inc., Dallas, Texas 75243
Andrew J. McKerrow
Affiliation:
Silicon Technology Development, Texas Instruments Inc., Dallas, Texas 75243
Robert Kraft
Affiliation:
Silicon Technology Development, Texas Instruments Inc., Dallas, Texas 75243
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Abstract

For 90 nm node devices, the group of materials known as organosilicate glass (OSG) has emerged as the predominant choice for intermetal dielectrics. A potential failure mechanism for this class of low-k dielectric films during the manufacturing process is catastrophic fracture due to channel cracking. The use of an electron beam curing process is being investigated for improvement in the mechanical strength of these silicon-based materials. Within this work, the effects of curing dose (micro-C/cm2) upon the mechanical properties of OSG thin films were characterized. For a set process voltage and current, linear relationships exist between the dose and several mechanical film properties. Channel crack growth velocities were also measured for these cured materials. As the cure dose is increased, the crack growth rate decreases according to a power law relationship. The structural film changes induced by the electron beam cure process are addressed, focusing on their impact upon the mechanical strength of OSG thin films.

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References

1. Cook, R.F. and Liniger, E.G., J. Electrochem. Soc. 146 (12), 4439 (1999).Google Scholar
2. Cook, R.F. and Zuo, Z., Materials Research Society (MRS) Bulletin, January 2002, 45.Google Scholar
3. Miyajima, H., Fujita, K., Nakata, R., Yoda, T., and Hayasaka, N.. IEEE Pro. International Interconnect Technology Conference 2004 (Pg. 222–224), San Francisco, CA. Google Scholar
4. Nagai, H., Maekawa, K., Iwashita, M., Muramatsu, M.et al. IEEE Proc. International Interconnect Technology Conference 2004 (Pg. 145–147), San Francisco, CA. Google Scholar
5. Mickler, E., Lin, C.T., Krishnan, A. T., Jin, C., and Jain, M.. IEEE Proc. International Interconnect Technology Conference 2004 (Pg. 190–192), San Francisco, CA. Google Scholar
6. Cook, R.F., Mat. Sci. and Eng., A, 260, 29 (1999).Google Scholar
7. Tsui, T.Y., Griffin, A.J. Jr, Jacques, J., Fields, R., McKerrow, A.J., and Kraft, R., “Effects of Elastic Modulus on the Fracture Behavior of Low-Dielectric Constant Films”, IEEE Proc. International Interconnect Technology Conference 2005, San Francisco, CA. Google Scholar
8. Hummel, Rolf E.. Electronic Properties of Materials, 2nd ed. Springer-Verlag: New York (1993).Google Scholar
9. Dauskardt, R.H., Lane, M., Ma, Q., and Krishna, N., Eng. Fract. Mech. 61, 141 (1998).Google Scholar
10. Lane, M., Krishna, N., Hashim, I., and Dauskardt, R.H., J. Mat. Res. 15 (1), 203 (2000).Google Scholar
11. Lane, M.W., Snodgrass, J.M., and Dauskardt, R.H., Microelectronics Reli. 41, 1615 (2001).Google Scholar
12. Fujita, K., Miyajima, H., Nakata, R., and Miyashita, N.. IEEE Proc. International Interconnect Technology Conference 2003 (Pg. 106–108), San Francisco, CA. Google Scholar
13. Litteken, C., Dauskardt, R., Scherban, T., Xu, G., Leu, J., Gracias, D., and Sun, B.. IEEE Proc. International Interconnect Technology Conference 2003 (Pg. 168–170), San Francisco, CA. Google Scholar
14. Grill, A. and Neumayer, D.A., J. Appl. Phys. 94 (10), 6697 (2003).Google Scholar
15. CRC Handbook of Chemistry and Physics, 71st ed., edited by Lide, David R.. CRC Press, Inc.: Boston (1990).Google Scholar