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Multi-Scale Simulations of Interfacial Fracture of Nanoscale Thin-Film Structures: Effect of Length Scales and Residual Stresses

Published online by Cambridge University Press:  10 February 2011

Sven Strohband  and
Reinhold H. Dauskardt
Sven Strohband
Affiliation:
Department of Mechanical Engineering, Stanford University
Reinhold H. Dauskardt
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford CA, 94305-2205
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Abstract

Plasticity is a significant contributor to the interfacial fracture resistance of multilayer thinfilm structures containing ductile layers. In this study we investigate the effect of a nanoscale elastic barrier layer separating the crack from a plastically deforming layer. The simulation procedure is multiscale in the sense that the simulation zone encompasses only a small region around the crack tip that includes the layers of interest and the bulk of the sample is modeled as applied boundary conditions on that region. The salient parameters governing the plasticity contribution to interfacial fracture energy, GC, including the barrier layer thickness and elastic properties, intrinsic fracture energy G0, and the maximum cohesive stress governing interface separation are reported. In addition, we explore the effect of residual stresses on debonding with particular attention to the the stress state in the ductile layer. It is shown that residual thin-film stresses can alter plasticity in the ductile layer and significantly influence the macroscopic fracture energy.

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References

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