Hostname: page-component-77f85d65b8-6c7dr Total loading time: 0 Render date: 2026-04-18T10:01:20.214Z Has data issue: false hasContentIssue false
  • English
  • Français

Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (Elo) of GaN Using Tungsten Mask

Published online by Cambridge University Press:  15 February 2011

Yasutoshi Kawaguchi ,
Shingo Nambu ,
Hiroki Sone ,
Masahito Yamaguchi ,
Hideto Miyake ,
Kazumasa Hiramatsu ,
Nobuhiko Sawaki ,
Yasushi Iyechika  and
Takayoshi Maeda
Yasutoshi Kawaguchi
Affiliation:
Department of Electronics, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan
Shingo Nambu
Affiliation:
Department of Electronics, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan
Hiroki Sone
Affiliation:
Department of Electronics, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan
Masahito Yamaguchi
Affiliation:
Department of Electronics, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan
Hideto Miyake
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama-cho, Tsu, Mie, 514-8507, Japan
Kazumasa Hiramatsu
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, 1515 Kamihama-cho, Tsu, Mie, 514-8507, Japan
Nobuhiko Sawaki
Affiliation:
Department of Electronics, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan
Yasushi Iyechika
Affiliation:
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd, 6 Kitahara, Tsukuba, Ibaraki, 300-3294, Japan
Takayoshi Maeda
Affiliation:
Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd, 6 Kitahara, Tsukuba, Ibaraki, 300-3294, Japan
Get access

Abstract

Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten (W) mask by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) have been studied. The selectivity of the GaN growth on the W mask as well as the SiO2 mask is excellent for both MOVPE and HVPE. The ELO-GaN layers are successfully obtained by HVPE on the stripe patterns along the <1100> crystal axis with the W mask as well as the SiO2 mask. There are no voids between the SiO2 mask and the overgrown GaN layer, while there are triangular voids between the W mask and the overgrown layer. The surface of the ELO-GaN layer is quite uniform for both mask materials. In the case of MOVPE, the structures of ELO layers on the W mask are the same as those on the SiO2 mask for the <1120> and <1100> stripe patterns. No voids are observed between the W or SiO2 mask and the overgrown GaN layer by using MOVPE.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G4.1
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Amano, H., Kito, M., Hiramatsu, K. and Akasaki, I.: Jpn. J. Appl. Phys. 28 (1989) L2112.Google Scholar
[2] Nakamura, S. and Fasol, G.: The blue laser diode (Splinger-Verlag Berlin Heidelberg, 1997)Google Scholar
[3] Wu, Y.-F., Keller, B. P., Keller, S., Nguyen, N. X., Le, M., Nguyen, C., Jenkins, T. J., Kehias, L. T., DenBaars, S. P. and Mishra, U. K.: IEEE Electron Device Lett. 18 (1997) 438.Google Scholar
[4] Wu, Y.-F., Keller, B. P., Fini, P., Keller, S., Jenkins, T. J., Kehias, L. T., DenBaars, S. P. and Mishra, U. K.: IEEE Electron Device Lett. 19 (1998) 50.Google Scholar
[5] Bozler, C. O. and Alley, G. D.: IEEE Trans. Electron Devices –27 (1980) 1128.Google Scholar
[6] Ujiie, Y. and Nishinaga, T.: Jpn. J. Appl. Phys. 28 (1989) L377.Google Scholar
[7] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M. and Chocho, K.: Appl. Phys. Lett. 72 (1998) 211.Google Scholar
[8] Vetury, R., Marchand, H., Ibbetson, J. P., Fini, P. T., Keller, S., Speck, J., DenBaars, S. P. and Mishra, U. K.: Extended Abstracts of 25th International Symposium on Compound Semiconductors, Nara (1998) S–2 Google Scholar
[9] Sakai, A., Sunakawa, H. and Usui, A.: Appl. Phys. Lett. 71 (1997) 2259.Google Scholar
[10] Matsushima, H., Yamaguchi, M., Hiramatsu, K. and Sawaki, N.: J. Cryst. Growth 189/190 (1998) 78.Google Scholar
[11] Nam, O.-H., Bremser, M. D., Zheleva, T. S. and Davis, R. F.: Appl. Phys. Lett. 71 (1997) 2638 Google Scholar
[12] Kawaguchi, Y., Nambu, S., Sone, H., Shibata, T., Matsushima, H., Yamaguchi, M., Miyake, H., Hiramatsu, K. and Sawaki, N.: Jpn. J. Appl. Phys. 37 (1998) L845.Google Scholar
[13] Shibata, T., Sone, H., Yahashi, K., Yamaguchi, M., Hiramatsu, K., Sawaki, N. and Itoh, N.: J. Cryst. Growth 189/190 (1998) 67.Google Scholar
[14] Usui, A., Sunakawa, H., Sakai, A. and Yamaguchi, A. A.: Jpn. J. Appl. Phys. 36 (1997) L899.Google Scholar