Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-24T18:33:54.158Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Properties of AlGaInP Resonant Cavity Light Emitting Diodes (RCLEDs)on Ge/SiGe/Si Substrates

Published online by Cambridge University Press:  01 February 2011

O. Kwon ,
J. Boeckl ,
M. L. Lee ,
A. J. Pitera ,
E. A. Fitzgerald  and
S. A. Ringel
O. Kwon
Affiliation:
The Ohio State University, Department of Electrical Engineering, 2015 Neil Avenue Columbus, OH 43210, U.S.A.
J. Boeckl
Affiliation:
The Ohio State University, Department of Electrical Engineering, 2015 Neil Avenue Columbus, OH 43210, U.S.A.
M. L. Lee
Affiliation:
Massachusetts Institute of Technology, Department of Materials Science and Engineering, 77 Massachusetts Avenue Cambridge, MA 02139, U.S.A.
A. J. Pitera
Affiliation:
Massachusetts Institute of Technology, Department of Materials Science and Engineering, 77 Massachusetts Avenue Cambridge, MA 02139, U.S.A.
E. A. Fitzgerald
Affiliation:
Massachusetts Institute of Technology, Department of Materials Science and Engineering, 77 Massachusetts Avenue Cambridge, MA 02139, U.S.A.
S. A. Ringel
Affiliation:
The Ohio State University, Department of Electrical Engineering, 2015 Neil Avenue Columbus, OH 43210, U.S.A.
Get access

Abstract

AlGaInP visible resonant cavity light emitting diodes (RCLEDs) were grown and fabricated on low-dislocation density, SiGe/Si metamorphic substrates by molecular beam epitaxy. A comparison with devices grown on GaAs and Ge substrates showed that not only did the RCLED device structure successfully transfer to the SiGe substrate, but also a higher optical output power was obtained. This is a result of a high thermal conductivity and an enhanced lateral current spreading. In addition, the growth of an AlGaAs current spreading layer and a modified top metal contact were incorporated to the SiGe RCLED to improve the device performance. With these improvements, a 410μm × 410μm device was fabricated with an optical power of 166μW at 665nm peak wavelength under 500mA current injection and an extremely narrow full width half maximum (FWHM) value of 3.63nm for electroluminescent emission under 50mA injection current.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z3.4
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fang, F., Adomi, K., Iyer, S., Morkoc, H., Zabel, H., Choi, C., and Otsuka, N., Journal of Applied Physics 68, R31–R58 (1990).Google Scholar
2. Sieg, R. M., Ringel, S. A., Ting, S. M., Samavedam, S. B., Currie, M., Langdo, T., and Fitzgerald, E. A., Journal of Vacuum Science & Technology B 16, 1471–1474 (1998).Google Scholar
3. Carlin, J. A., Ringel, S. A., Fitzgerald, E. A., and Bulsara, M., Progress in Photovoltaics 8, 323–332 (2000).Google Scholar
4. Groenert, M. E., Leitz, C. W., Pitera, A. J., Yang, V., Lee, H., Ram, R. J., and Fitzgerald, E. A., Journal of Applied Physics 93, 362–367 (2003).Google Scholar
5. Currie, M. T., Samavedam, S. B., Langdo, T. A., Leitz, C. W., and Fitzgerald, E. A., Applied Physics Letters 72, 1718–1720 (1998).Google Scholar
6. Sieg, R. M., Ringel, S. A., Ting, S. M., Fitzgerald, E. A., and Sacks, R. N., Journal of Electronic Materials 27, 900–907 (1998).Google Scholar
7. Orsila, S., Tukiainen, A., Uusimaa, P., Dekker, J., Leinonen, T., and Pessa, M., Journal of Crystal Growth 227, 249–254 (2001).Google Scholar
8. Semiconductor Parameters, edited by Levinshtein, M., Rumyantsev, S., and Shur, M., (World Scientific, Singapore, 1996).Google Scholar
9. Watanabe, K., Nakanishi, H., Yamada, K., and Hoshikawa, K., Applied Physics Letters 45, 643–645 (1984).Google Scholar
10. Lee, C. Y., Wu, M. C., and Lin, W., Journal of Crystal Growth 200, 382–390 (1999).Google Scholar