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Growth and Structure of Al/MgO Interfaces

Published online by Cambridge University Press:  15 February 2011

T. Wagner  and
M. Ruhle
T. Wagner
Affiliation:
Max-Planck-lnstitut für Metallforschung, Institut für Werkstoffwissenschaft, 70174 Stuttgart, Germany
M. Ruhle
Affiliation:
Max-Planck-lnstitut für Metallforschung, Institut für Werkstoffwissenschaft, 70174 Stuttgart, Germany
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Abstract

The A1/MgO system has been used as a model system to study growth processes and structure at metal/ceramic interfaces. Aluminum films were grown on air-cleaved MgO (100) substrates in ultra high vacuum (UHV) by molecular beam epitaxy (MBE). The substrates and films were characterized by reflection high energy electron diffraction (RHEED), x-ray diffraction (XRD), conventional transmission electron microscopy (CTEM), and high resolution transmission electron microscopy (HREM). XRD measurements exhibited a pronounced {100} texture. Employing electron diffraction in the TEM on cross sectional samples, we observed the following orientation relationship between Al and MgO: (100)A1 II (100)MgO; [010]A1 II [010]MgO. The atomistic structure of the interface was investigated by HREM. Regions of structural defects can be identified clearly at the interface.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 357: Symposium C – Structure and Properties of Interfaces in Ceramics , 1994 , 41
Copyright
Copyright © Materials Research Society 1995

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References

Literature

1. Akridge, J. R. and Balkanski, M., Solid State Microbatteries, NATO ASI Series, Vol. 217 (Plenum Press, New York, 1990)Google Scholar
2. Exner, H. E. and Schumacher, V., Advanced Materials and Processes, Vol. 2 (DGM, Oberursel, 1990)Google Scholar
3. Minges, M. L., Electronic Materials Handbook, Vol. 1 (ASM International, 1989)Google Scholar
4. Trampert, A., Ernst, F., Flynn, C. P., Fischmeister, H. F. and Riihle, M., Acta metall. mater. 40, S227 (1992)Google Scholar
5. Schönberger, U., Andersen, O. K. and Methfessel, M., Acta. metall. mater. 40, S1 (1992)Google Scholar
6. Finnis, M. W., Kruse, C. and Schönberger, U., Conf. Proc. Nanostructural Materials 1994, (to be published)Google Scholar
7. Strecker, A., Salzberger, U. and Mayer, J., Prakt. Metallogr. 30, 481 (1993)Google Scholar
8. Dobson, P. J., in Surface and Interface Characterization by Electron Optical Methods, Vol. 191, edited by Howie, A. and Valdrè, U. (Plenum Press, New York, 1987) p. 159 Google Scholar
9. Bethge, H., Pippel, E. and Woltersdorf, J., phys. stat. sol. (a) 37, 457 (1976)Google Scholar
10. Hoel, R. H., Penisson, J. M. and Habermeier, H. U., J. Colloque de Physique CI 51, 837 (1990)Google Scholar
11. Zhang, S.-Y. and Cowley, J. M., Thin Solid Films 148, 301 (1987)Google Scholar