The 18th Microscopy of Semi-Conducting Materials (MSM XVIII), sponsored by the Royal Microscopical Society (RMS), will be held April 7–11, 2013, at St Catherine’s College, University of Oxford, United Kingdom.

Chaired by John Hutchison (University of Oxford) and Thomas Walther (University of Sheffield), the conference will focus on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterization techniques including scanning probe microscopy, and x-ray topography and diffraction will also be featured. Developments in materials science and technology covering the complete range of elemental and compound semiconductors will be described.

Invited speakers include Simona Boninelli (University of Catania, Italy), Pavel Potapov (Global Foundries, Dresden, Germany), and Toshiharu Saiki (Mejo University, Kanagawa, Japan). On the evening of April 9, the RMS Annual Materials Lecture will be delivered by Sir Colin J. Humphreys (University of Cambridge, UK) on the topic of how microscopy and semiconductors can help to solve some major world problems.

The conference is endorsed by the Materials Research Society.