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Formation and Characterization of Single Crystal Ni2MnGa Thin Films

Published online by Cambridge University Press:  15 February 2011

J. W. Dong ,
L. C. Chen ,
S. Mckernan ,
J. Q. Xie ,
M. T. Figus ,
R. D. James  and
C. J. Palmstrøm
J. W. Dong
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
L. C. Chen
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
S. Mckernan
Affiliation:
Center for Interfacial Engineering, University of Minnesota, Minneapolis, MN 55455
J. Q. Xie
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
M. T. Figus
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
R. D. James
Affiliation:
Dept. of Aerospace Engineering and Mechanics, University of Minnesota, Minneapolis, MN 55455
C. J. Palmstrøm
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
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Abstract

In this paper, molecular beam epitaxial growth of Ni2MnGa single crystal layers on GaAs (001) using a NiGa interlayer is reported. X-ray diffraction and transmission electron microscopy confirmed an epitaxial relationship of Ni2MnGa [100]“010] // GaAs [100] [010] and a tetragonal structure of the film (a = b = 5.79 Å, c = 6.07 Å). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers revealed an in-plane magnetization of ∼200 emu/cm3at room temperature and a Curie temperature of ∼350 K. The martensitic phase transformation was observed to occur at ∼250 K

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 604: Symposium LL – Materials for Smart Systems III , 1999 , 297
Copyright
Copyright © Materials Research Society 2000

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References

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