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Deconvolutional treatment about sample transparency aberration interfered by opaque and translucent sample holders in Bragg–Brentano geometry

Published online by Cambridge University Press:  10 March 2025

Takashi Ida*
Affiliation:
Advanced Ceramics Research Center, Nagoya Institute of Technology, Asahigaoka 10-6-29, Tajimi, Gifu 507-0071, Japan
*
Corresponding author: Takashi Ida; Email: ida.takashi@nitech.ac.jp

Abstract

Sample transparency aberration in Bragg–Brentano geometry affected by interference with opaque and translucent sample holders has been formulated. The formulation for an opaque sample holder should be classified to 5 cases, depending on the apparent diffraction angle, beam width, specimen width, and specimen thickness. The cumulants of the aberration function for a translucent sample holder with an arbitrary linear attenuation coefficient can numerically be evaluated by a Gauss–Legendre quadrature. The use of a function defined by the convolution of truncated exponential and rectangular functions has been tested as the model for the aberration function. A double deconvolutional treatment (DCT) designed to cancel the effects of the first and third order cumulants of the aberration function has been applied to the XRD data of Si standard powder, NIST SRM640d. The diffraction peak profile in the data treated by the DCT method certainly shows improved symmetry. The main features of the symmetrized peak profile in the DCT data have been simulated by instrumental and specimen parameters. It is suggested that the current analytical method could be utilized for texture analysis, if the manufacturer of an XRD instrument should supply a more accurate information about the instrument.

Information

Type
Technical Article
Creative Commons
Creative Common License - CCCreative Common License - BY
This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/4.0), which permits unrestricted re-use, distribution and reproduction, provided the original article is properly cited.
Copyright
© The Author(s), 2025. Published by Cambridge University Press on behalf of International Center for Diffraction Data
Figure 0

Figure 1. Arrangement of optics in Bragg–Brentano geometry.

Figure 1

Figure 2. Five cases for formulation of sample transparency aberration interrupted by an opaque specimen holder. Ω0 = W/2 + Ω/2 − τ, Ω1 = W/2 − Ω/2, Ω2 = W – τ, Ω3 = W/2 + Ω/2, t1 = (Ω1/2)tanΘ, t2 = (W/2)tanΘ, and t3 = (Ω3/2)tanΘ, as shown in the schematic illustrations.

Figure 2

Figure 3. Construction of the aberration function for the case (b). Case (b) is the sum of the components (b-1) and (b-2). The part (b-2) is equivalent with the difference of (b-2-a) and (b-2-b).

Figure 3

Figure 4. Construction of case (c’). Case (c’) is identical to the difference between the case (c’-1) and (c’-2).

Figure 4

Figure 5. Interference by the upstream side part of the sample holder for the reflection at the point (x, z).

Figure 5

Figure 6. Values of effective transmittance evaluated for an opaque sample holder, and a translucent sample holder on variation of number of sampling points of Gauss–Legendre integrals. Vertical lines indicate the locations of the boundaries between the cases (a), (b), (c), and (d), for an opaque sample holder.

Figure 6

Figure 7. Magnified plot about irregular behaviors in the normalized effective transmittance calculated for opaque and translucent sample holders.

Figure 7

Figure 8. The first-order and the reduced third-order cumulants of the sample transparency aberration function for opaque and translucent sample holders. Values calculated based on a conventional assumption are also plotted in the figure.

Figure 8

Figure 9. Observed intensity profile (raw), DCT data, fit curve, and residuals of the fitting for Si 111-reflection peak. The vertical line indicates the peak location listed in the certificate of NIST SRM640d.

Figure 9

Figure 10. Observed intensity profile (raw), DCT data, fit curve, and residuals of the fitting for Si 422-reflection peak. The vertical line indicates the peak location listed in the certificate of NIST SRM640d.

Figure 10

Figure 11. Observed intensity profile (raw), DCT data, fit curve, and residuals of the fitting for Si 533-reflection peak. The vertical line indicates the peak location listed in the certificate of NIST SRM640d.

Figure 11

Table I. Optimized values of background intensity b, integrated peak intensity I, peak location 2Θpeak, half width at half maximum (HWHM) w of the Lorentzian component, and fixed values of the standard deviation σ and kurtosis k of the symmetrized instrumental function, for hkl reflections of Si. Numbers in parentheses represent the square root of the diagonal elements of the covariance matrices about the adjusted parameters.

Figure 12

Figure 12. Difference of the peak locations optimized by an IPPF method from the values listed in the certificate of NIST SRM640d.

Figure 13

Figure 13. Williamson–Hall plot about the integral breadth B = πw of the optimized Lorentzian component. Fit line is given by B cos Θ = B0 + B1 sin Θ, optimized at B0 = 0.0394(2)° and B1 = 0.0559(3)°. The slope expected for the relative Lorentzian FWHM Δλ/λ = 0.00035 is drawn as a broken line.