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Structure and Optoelectronic Properties as a Function of Hydrogen Dilution of Micro-Crystalline Silicon Films Prepared by Hot Wire Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

Guozhen Yue ,
Jing Lin ,
Qi Wang  and
Daxing Han
Guozhen Yue
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255, USA
Jing Lin
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255, USA
Qi Wang
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Daxing Han
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255, USA
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Abstract

Films prepared by hot wire CVD using H dilution ratio, R=H 2/SiH4, from 1 to 20 were studied by X-ray, Raman, PL, and conductivity measurements. We found that (a) when the dilution ratio reached R=3, the structure transition from amorphous to microcrystalline growth occured; meanwhile, PL spectrum showed a dual-peak at 1.3 and 1.0 eV; (b) the total intensity, band width, and peak position of the low energy PL band decreased with increasing H dilution; (c) both the Raman and PL measured from the transparent substrate side showed that initial growth tends to be amorphous and a portion of μc-Si was formed when R ≥ 5; and (d) the conductivity activation energy first decreased from 0.68 to 0.15 eV when the film transition from a- to μc-Si; then increased slightly with increasing μc-Si fraction. The results demonstrate that the variation of the H-dilution ratio has significant effects on both the film structures and the optoelectric properties.

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