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Stability and Oxidation Behavior of Ir Thin Film Electrodes on Si and SiO2

Published online by Cambridge University Press:  10 February 2011

K.L. Saenger
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
A. Grill
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
T.M. Shaw
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
D.A. Neumayer
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
Chenting Lin
Affiliation:
Siemens Microelectronics, Inc., Hopewell Junction, NY 12533
Y.Y. Wang
Affiliation:
IBM Microelectronics, Hopewell Junction, NY 12533
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Abstract

This paper examines factors affecting the oxidation behavior of Ir thin film electrodes and the stability of bilayer Ir/Ir-Ir-O-Si electrodes on silicon substrates. We first examine the morphology and texture of faceted IrO2 extrusions formed on the Ir films during thermal oxidation, and show that an Ir grain-growth anneal in N2 at 650°C for 5 min prior to the oxidation treatment increases both the areal density of IrO2 extrusions and the IrO2<110> x-ray diffraction intensity while decreasing apparent film roughness. We then examine the stability of bilayer lr(100 nm)/Ir(20 nm) films on polycrystalline silicon and show how fairly mild oxygen anneals of the Ir(20 nm)/Si structures can provide an in-situ formed Ir-O-Si barrier that protects the subsequently deposited Ir(100 nm) layer from silicidation reactions during annealing in N2 ambients at 750°C. Transmission electron microscopy indicates that this in-situ formed barrier at the Ir/Si interface has a two layer structure comprising an IrSix underlayer in contact with the silicon substrate and an SiO2 overlayer directly below the remaining Ir.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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