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Ion Implantation Processing of III-V Strained-Layer Semiconductors

Published online by Cambridge University Press:  21 February 2011

David R. Myers
David R. Myers*
Affiliation:
Sandia National Laboratories, Division 1141, Albuquerque, NM 87185
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Abstract

Ion implantation has had a strong impact on the development of III-V strained-layer semiconductor (SLS) materials and device technologies. Implantation studies have helped delineate the present understanding of strained-layer stability and metastability limits. Resulting ion beam technologies have led to improvements in a variety of SLS discrete devices, including optoelectronic emitters, photodetectors, and field-effect transistors. Both SLS stability criteria and implanted SLS devices are reviewed with respect to future applications in optoelectronics.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 195
Copyright
Copyright © Materials Research Society 1988

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References

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