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Sol-Gel Derived Pb(Zn1/3Nb2/3)O3-PbTiO3 Thin Films

Published online by Cambridge University Press:  10 February 2011

G. Teowee ,
K. C. McCarthy ,
F. S. McCarthy ,
D. G. Davis Jr ,
J. T. Dawley ,
B.J.J. Zelinski  and
D. R. Uhlmann
G. Teowee
Affiliation:
Donnelly Corporation, 4545 East Fort Lowell Road, Tucson, AZ 85712
K. C. McCarthy
Affiliation:
Donnelly Corporation, 4545 East Fort Lowell Road, Tucson, AZ 85712
F. S. McCarthy
Affiliation:
Donnelly Corporation, 4545 East Fort Lowell Road, Tucson, AZ 85712
D. G. Davis Jr
Affiliation:
Department of Materials Science and Engineering, University of Arizona, Tucson, AZ 85721.
J. T. Dawley
Affiliation:
Department of Materials Science and Engineering, University of Arizona, Tucson, AZ 85721.
B.J.J. Zelinski
Affiliation:
Department of Materials Science and Engineering, University of Arizona, Tucson, AZ 85721.
D. R. Uhlmann
Affiliation:
Department of Materials Science and Engineering, University of Arizona, Tucson, AZ 85721.
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Abstract

A series of sol-gel derived PB(Zn1/3Nb2/3)O3-PbTiO3 (PZN-PT) films, with various PbTiO3 contents, have been prepared on platinized Si wafers. The (l-x)PZN - xPT films fired to 700C became single phase perovskite for x > 0.7. In the PZN-0.1PT films, the films still contain pyrochlore phase at a firing temperature of 850C; the perovskite phase appeared at a firing temperature of 800C. The dielectric constant increased with increasing PT content, with a peak in dielectric constant at x = 0.8. PZN-PT films with x = 0.8 exhibited dielectric constant, dissipation factor, remanent polarization and coercive field values of 600, 0.10, 6 and 45 kV/cm respectively.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 445
Copyright
Copyright © Materials Research Society 1998

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References

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