Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-25T17:27:52.949Z Has data issue: false hasContentIssue false

Experimental Study of Phonon-Folding in Si/Ge and Si/Sige Structures Designed for Thermoelectric Applications

Published online by Cambridge University Press:  10 February 2011

J. Liu
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California - Los Angeles, Los Angeles, CA 90095 USA, alexb@ee.ucla.edu
A. Balandin
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California - Los Angeles, Los Angeles, CA 90095 USA, alexb@ee.ucla.edu
T. Borca-Tascjuc
Affiliation:
Nanoscale Heat Transfer and Termoelectricity Laboratory, Department of Mechanical and Aerospace Engineering, University of California - Los Angeles, Los Angeles, CA 90095 USA
Y. S. Tang
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California - Los Angeles, Los Angeles, CA 90095 USA, alexb@ee.ucla.edu
K. L. Wang
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California - Los Angeles, Los Angeles, CA 90095 USA, alexb@ee.ucla.edu
G. Chen
Affiliation:
Nanoscale Heat Transfer and Termoelectricity Laboratory, Department of Mechanical and Aerospace Engineering, University of California - Los Angeles, Los Angeles, CA 90095 USA
Get access

Abstract

We report data of Raman study of Si/Ge and Si/SiGe superlattices designed for thermoelectric applications. The obtained Raman spectra clearly indicate the presence of folded doublets from longitudinal acoustic phonons. Due to the significant difference in the sound velocities for Si and Ge the position of the doublets strongly depends on the superlattice layer thickness and ordering. Comparison of the Raman data for different samples with measured thermal and thermoelectric properties allows us to determine a correlation between the strength of the phonon confinement in these structures and their thermoelectric properties. Our experimental results are consistent with recent theoretical prediction of increased thermoelectric figure of merit in semiconductor quantum wells.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Balandin, A. and Wang, K.L., Phys. Rev. B 58, 1544 (1998).Google Scholar
2. Balandin, A. and Wang, K.L., “Giant drop of the lattice thermal conductivity due to confinement of acoustic phonons,” in Nanostructures: Physics and Technology, edited by Alferov, Zh., Esaki, L. (Ioffe Institute, St. Petersburg, 1998), p. 24.Google Scholar
3. Balandin, A. and Wang, K.L., J. Appl. Phys., 84, 6149 (1998).CrossRefGoogle Scholar
4. Hicks, L.D., Dresselhaus, M.S., Phys. Rev. B 47, 12727 (1993).Google Scholar
5. Hicks, L.D., Harman, T.C., Sun, X., and Dresselhaus, M., Phys. Rev. B 53, R10493 (1996).Google Scholar
6. Chen, G., Trans. Of ASME 119, 220 (1997); G. Chen, Phys. Rev. B 57, 14958 (1998).CrossRefGoogle Scholar
7. Wang, K.L. and Zheng, X., in Properties of Strained and Relaxed Silicon Germanium, edited by Kasper, E. (INSPEC, the Institution of Electrical Engineers, London, UK, 1995), p. 70–78.Google Scholar
8. Rytov, S.M., Soviet Phys. Acoust. 2, 67 (1956).Google Scholar
9. Colvard, C., Gant, T.A., Klein, M.V., Merlin, R., Fischer, R., Korkoc, H., and Gossard, A.C., Phys. Rev. B., 31, 2080 (1985).Google Scholar
10. Wu, X.L., Siu, G.G., Stokes, M.J., Tong, S., Yan, F., Liu, X.N., Bao, X.M., Jiang, S.S., Zhang, X.K., and Feng, D., Appl. Phys. Lett 69, 1855 (1996).Google Scholar
11. Borca-Tasciuc, T., Song, D., Liu, J. L., Chen, G. Wang, K. L., Sun, X., Dresselhaus, M. S., Radetic, T., Gronsky, R., “Anisotropic thermal conducitvity of Si/Ge superlattices,” paper presented at the 1998 MRS fall meeting.Google Scholar