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Effect of Near-Interface Concentration Change on Barrier Height in Ion-Bombarded and Heat-Treated GaAs Schottky Contacts

Published online by Cambridge University Press:  25 February 2011

ZS. J. Horváth
ZS. J. Horváth*
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O. Box 76. H-1325, Hungary
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Abstract

The change of the doping concentration (including type) near the metal-semiconductor interface influences the Schottky barrier height (BH). In many cases this phenomenon is apparently spontaneous, or it is a side effect of the technology. The goal of this paper is to summarize the effect of the near-interface concentration change on the apparent and real Schottky BHs, and to demonstrate its importance with experimental results obtained in GaAs Schottky contacts. The question of the definition of the real BH for some of these structures is also treated.

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