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Bistable Electrical Switching and Rewritable Memory Effect in a Thin Film Acrylate Copolymer Containing Carbazole-Oxadiazole Donor–Acceptor Pendant Groups

Published online by Cambridge University Press:  01 February 2011

Eric Teo ,
Qidan Ling ,
Siew Lay Lim ,
Koon Gee Neoh ,
En-Tang Kang ,
Daniel Siu Hung Chan  and
Chunxiang Zhu
Eric Teo
Affiliation:
chetyhe@nus.edu.sg, National University of Singapore, Electrical and Computer Engineering, Singapore, Singapore
Qidan Ling
Affiliation:
iamqdling@njupt.edu.cn, Nanjing University of Posts and Telecommunications, Institute of Advanced Materials, Nanjing, China
Siew Lay Lim
Affiliation:
g0404230@nus.edu.sg, National University of Singapore, Chemical and Biomolecular Engineering, Singapore, Singapore
Koon Gee Neoh
Affiliation:
chenkg@nus.edu.sg, National University of Singapore, Chemical and Biomolecular Engineering, Singapore, Singapore
En-Tang Kang
Affiliation:
cheket@nus.edu.sg, National University of Singapore, Chemical and Biomolecular Engineering, Singapore, Singapore
Daniel Siu Hung Chan
Affiliation:
elecshd@nus.edu.sg, National University of Singapore, Electrical and Computer Engineering, Singapore, Singapore
Chunxiang Zhu
Affiliation:
elezhucx@nus.edu.sg, National University of Singapore, Electrical and Computer Engineering, Singapore, Singapore
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Abstract

The molecular conformation-dependent write-once read-many-times (WORM) memory based on an acrylate polymer containing pendant carbazole (donor) groups is transformed into a flash (rewritable) memory when acrylate units containing pendant oxadiazole (acceptor) groups are incorporated to form a copolymer. The as-fabricated device based on the acrylate copolymer containing carbazole-oxadiazole donor-acceptor pendant groups is in its low conductivity state and can be written to a high conductivity state at a threshold voltage of -1.8 V. The high conductivity state can be switched (erased) to the low conductivity state with a positive bias of 3.6 V. The device exhibits a high ON/OFF current ratio of 103 at a read voltage of -1 V. This rewritable polymer memory can be programmed and erased repeatedly with good accuracy. The copolymer is potentially useful for application in flash memory devices.

Keywords

polymermemoryorganic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1114: Symposium G – Organic and Hybrid Materials for Large-Area Functional Systems , 2008 , 1114-G05-02
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

1. Jin, S.H., Kim, M.Y., Kim, J.Y., Lee, K.H., Gal, Y.S., J. Am. Chem. Soc. 126, 2474 (2004).Google Scholar
2. Garnier, F., Hajlaoui, R., Yassar, A., Srivastava, P., Science 265, 1684 (1994).Google Scholar
3. Salzman, R.F.B., Rand, B.P., Forrest, S.R., Appl. Phys. Lett. 88, 233502 (2006).Google Scholar
4. Bandyopadhyay, A., Pal, A.J., J. Phys. Chem. B. 109, 6084 (2005).Google Scholar
5. Song, Y., Ling, Q.D., Zhu, C., Kang, E.T., Chan, D.S.H., Wang, Y.H., Kwong, D.L., IEEE Electron Device Lett. 27, 154 (2006).Google Scholar
6. Ling, Q.D., Song, Y., Lim, S.L., Teo, E.Y.H., Tan, Y.P., Zhu, C.X., Chan, D.S.H., Kwong, D.L., Kang, E.T., Neoh, K.G., Angew. Chem. Int. Ed. 45, 2947 (2006).Google Scholar
7. Ling, Q.D., Song, Y., Ding, S.J., Zhu, C.X., Chan, D.S.H., Kwong, D.L., Kang, E.T., Neoh, K.G., Adv Mat. 17, 455 (2005).Google Scholar
8. Dumond, J. J., Low, H.Y., Rodriguez, I., Nanotechnology 17, 1975 (2006).Google Scholar
9. Ouyang, J.Y., Chu, C.W., Sieves, D., Yang, Y., Appl. Phys. Lett. 86, 123507 (2005).Google Scholar
10. Jiang, Y.M., Wan, X.G., Guo, F., Xie, H.B., Liu, P., Li, J., phys. stat. Sol. 202, 1804 (2005).Google Scholar
11. Jin, S.H. et al, J. Am. Chem. Soc. 126, 2474 (2004).Google Scholar
12. Walsh, C.A. et al, Chem. Phys. Lett. 195, 309 (1992).Google Scholar
13. Cha, S.W., Joo, S.H., Jeong, M.Y., Jin, J.I.. SYn. Metals. 150, 309 (2005).Google Scholar
14. Chu, C.W., Ouyang, J.Y., Tseng, J.H., Yang, Y., Adv. Mater. 17, 1440 (2005).Google Scholar
15. Teo, E.Y.H., Ling, Q.D., Song, Y., Tan, Y.P., Wang, W., Kang, E.T., Chan, D.S.H., Zhu, C.X., Org. Elect. 7, 173 (2006).Google Scholar
16. Sanetra, J., Bogdal, D., Warzala, M., Boron, A., Chem. Mater. 14(1), 89 (2002).Google Scholar
17. Wainwright, M., Griffths, J., Guthrie, J.T., Gates, A.P., Murry, D.E., J. Appl. Polm. Sci. 44, 1179 (1992).Google Scholar
18. Greczmiel, M., Strohriegl, P., Meier, M. and Brutting, W., Macromolecules 30 6042 (1997).Google Scholar
19. Liu, Y., Liu, M.S., Jen, A.K.Y., Acta Polym. 50105. MA048990M (1999).Google Scholar
20. Frisch, M.J. et al, Gaussian 03 (Revision D.01), Gaussian, Inc., Wallingford CT, (2004).Google Scholar