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In-situ Measurement of Viscous Flow of Thermal Silicon Dioxide Thin Films at High Temperature

Published online by Cambridge University Press:  10 February 2011

Chia-Liang Yu ,
Paul A. Flinn  and
John C. Bravman
Chia-Liang Yu
Affiliation:
Department of Materials Science and Engineering, Stanford University Stanford, CA 94305
Paul A. Flinn
Affiliation:
Department of Materials Science and Engineering, Stanford University Stanford, CA 94305
John C. Bravman
Affiliation:
Department of Materials Science and Engineering, Stanford University Stanford, CA 94305
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Abstract

With a newly constructed high temperature wafer curvature system, we measured significant viscous flow of thermal oxides at temperatures as low as 800°C. In-situ measurements were performed at temperatures between 800°C and 1100°C for wet and dry thermal oxide films of various thicknesses. We found that dry oxides have higher stresses and slower stress relaxation compared to wet oxides grown at higher temperatures. The viscosity of thermal oxide thin films was found to increase with time during relaxation and a structural relaxation process is suggested to explain this phenomenon.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 261
Copyright
Copyright © Materials Research Society 1997

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