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Plasma Chemistry in Silane and Silane-Germane Discharge Deposition

Published online by Cambridge University Press:  25 February 2011

A. Gallagher ,
J. Doyle  and
D. Doughty
A. Gallagher
Affiliation:
Joint Institute for Laboratory Astrophysics, University of Colorado and National Institute of Standards and Technology Boulder, CO 80309 -0440
J. Doyle
Affiliation:
Joint Institute for Laboratory Astrophysics, University of Colorado and National Institute of Standards and Technology Boulder, CO 80309 -0440
D. Doughty
Affiliation:
Joint Institute for Laboratory Astrophysics, University of Colorado and National Institute of Standards and Technology Boulder, CO 80309 -0440
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Abstract

The spatial and energetic characteristics of rf and dc parallel-plate deposition discharges are discussed, along with their implications to plasma chemistry. We discuss the results and interpretation of our recent measurements of silane, disilane, germane, and mixed-gas stochiometry. These yield the initial dissociation branching between even and odd dangling-bond radicals, as well as the relative roles of higher silanes and silyl germanes (produced by the discharge) in the chemistry. Our deposition model and supporting data are discussed, as are various causes of film-quality variations which this suggests.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 23
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Kushner, M. J., in Plasma Processing, edited by Coburn, J. W., Gottscho, R. A., and Hess, D. W. (Materials Research Society Symposia Proceedings, Vol. 68, 1986); IEEE Trans. Plasma Sci. PS-14, 188 (1986).Google Scholar
2. Perrin, J., Cabarrocas, P. R., Allain, B., and Friedt, J-M., Jap. J. Appl. Phys. 27, 2041 (1989).CrossRefGoogle Scholar
3. Doyle, J. R., Thesis, University of Colorado, Boulder, CO 1989.Google Scholar
4. Doyle, J. R. and A. Gallagher (in preparation).Google Scholar
5. Doughty, D. and Gallagher, A., J. Appl. Phys. (submitted).Google Scholar
6. Longeway, P. A., Estes, R. D., and Wiekliem, H. A., J. Phys. Chem. 88, 73 (1984); 88, 3282 (1984).CrossRefGoogle Scholar
7. Robertson, R., Hils, D., Chatham, H., and Gallagher, A., Appl. Phys. Lett. 43, 544 (1983); R. Robertson and A. Gallagher, J. Appl. Phys. 59, 3402 (1986).CrossRefGoogle Scholar
8. Doughty, D. and A. Gallagher (in preparation).Google Scholar
9. Inoue, G. and Suzuki, M., Chem. Phys. Lett. 122, 361 (1985).CrossRefGoogle Scholar
10. Jasinski, J. M. and Chu, J. O., J. Chem. Phys. 88, 1678 (1988).CrossRefGoogle Scholar
11. Gallagher, A., J. Appl. Phys. 63, 2406 (1988).CrossRefGoogle Scholar
12. Lin, G. H., Doyle, J. R., He, M., and Gallagher, A., J. Appl. Phys. 64, 188 (1988).CrossRefGoogle Scholar
13. Mackenzie, K. D., Burnett, J. H., Eggert, J. R., Li, Y.-M., and Paul, W., Phys. Rev. B 38, 6120 (1988).CrossRefGoogle Scholar
14. Tsai, C. C., Knights, J. C., Chang, G., and Wacker, B., J. Appl. Phys. 59, 2998 (1986).CrossRefGoogle Scholar
15. Drevillon, B., Perrin, J., Siefert, J. M., Huc, J., Lloret, A., deRosny, G., and Schmitt, J. P. M., Appl. Phys. Lett. 42, 801 (1983).CrossRefGoogle Scholar