Hostname: page-component-848d4c4894-m9kch Total loading time: 0 Render date: 2024-05-12T15:03:17.428Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Roughness and Growth Texture of (Ba,Sr)TiO3 Thin Films Formed by MOCVD

Published online by Cambridge University Press:  10 February 2011

Y. Gao ,
P. Alluri ,
S. He ,
M. Engelhard ,
A.S. Lea ,
J. Finder ,
B. Melnick  and
R. L. Hance
Y. Gao
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, MS K8-93, Richland, WA 99352
P. Alluri
Affiliation:
Materials Research & Strategic Technologies, Motorola Inc., K-10, 3501 Ed Bluestein Boulevard, Austin, TX 78721
S. He
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, MS K8-93, Richland, WA 99352
M. Engelhard
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, MS K8-93, Richland, WA 99352
J. Finder
Affiliation:
Phoenix Corporate Research Laboratories, Motorola Inc., EL508, 2100 East Elliot Rd., Tempe, AZ 85284
B. Melnick
Affiliation:
Materials Research & Strategic Technologies, Motorola Inc., K-10, 3501 Ed Bluestein Boulevard, Austin, TX 78721
R. L. Hance
Affiliation:
Materials Research & Strategic Technologies, Motorola Inc., K-10, 3501 Ed Bluestein Boulevard, Austin, TX 78721
Get access

Abstract

Metalorganic chemical vapor deposition (MOCVD) has been used to grow (Ba,Sr)TiO3 thin films on Ir/SiO2/Si substrates. β-diketonates of Ba, Sr, and Ti were used as the precursors, and delivered to the reactor via direct-liquid injection. Growth rate and film thickness were monitored by in-situ spectroscopic ellipsometry, and determined after growth. Film growth was studied as a function of film thickness, composition, substrate temperature, and mixture of O2 and N2O with and without microwave plasma enhancement. Dense, mirror-like films were obtained under all conditions except when pure oxygen plasma enhancement was used. Surface roughness of the films appears strongly dependent on film thickness and composition. Film composition and growth temperature determine growth texture of the films. This paper describes these results as well as the correlation between these results and dielectric properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 29
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Association, S.I., The National Technology Roadmap for Semiconductors,, (1994, 1997).Google Scholar
[2] Kotecki, D.E., Semiconductor International, 19, 109 (1996).Google Scholar
[3] Kawahara, T., Yamamuka, M., Makita, T., Naka, J. et al. , Jpn. J. appl. Phys., 33, 5129 (1994).Google Scholar
[4] Yamamuka, M., Kawahara, T., Yuuki, A., and Ono, K., Jpn. J. Appl. Phys., 35, 2530 (1996).Google Scholar
[5] Van Buskirk, P.C., Bilodeau, S.M. et al. , Jpn. J. Appl. Phys., 35, 2520 (1996).Google Scholar
[6] Bilodeau, S.M., Carl, R., Buskirk, P. Van, and Ward, J., Solid State Technol, July, 235 (1997).Google Scholar
[7] Yoshida, M., Yamaguchi, H., Sakuma, T. et al. , J. Electrochem. Soc., 142, 244 (1995).Google Scholar
[8] Li, T., Zawadzki, P., Stall, R.A., Liang, S., and Lu, Y., Integr. Ferroelectrics, 17, 127 (1997).Google Scholar
[9] Dey, S.K., in Ferroelectric Thin films: synthesis and basic properties, Araujo, C. Paz de, Scott, J.F., and T.G.W., , Editors. 1996, Gordon and Breach: New York.Google Scholar
[10] Gao, Y., Thin Solid Films,, in press (1998).Google Scholar
[11] Jung, S.W., Bang, I., Lee, J., and Kim, J., Mat. Res. Soc. Symp. Proc., 493, 201 (1998).Google Scholar