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Poly-Si Thin Film Formation Using a Novel Low Thermal Budget Process

Published online by Cambridge University Press:  20 June 2011

Minghao Zhu ,
Yue Kuo ,
Chen-Han Lin  and
Qi Wang
Minghao Zhu
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Texas A&M University, College Station, TX 77843-3122, U.S.A.
Yue Kuo
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Texas A&M University, College Station, TX 77843-3122, U.S.A.
Chen-Han Lin
Affiliation:
Thin Film Nano & Microelectronics Research Laboratory, Texas A&M University, College Station, TX 77843-3122, U.S.A.
Qi Wang
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401, U.S.A.
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Abstract

Polycrystalline silicon thin films were formed from the amorphous silicon thin film by the pulsed rapid thermal annealing process enhanced with a thin nickel seed layer through the vertical crystallization mechanism. In this paper, authors presented the results on the material properties of the crystallized film. The dopant and film thickness effects were also investigated. It has been demonstrated that a 2 μm thick amorphous silicon n+-i-p+ diode structure could be transformed into polycrystalline stack with a 4-pulse 1 sec 850°C heating and 5 sec cooling cycle process.

Keywords

crystal growthelectronic materialthin film

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a03-05
Copyright
Copyright © Materials Research Society 2011

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References

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