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Role of Molecular Structure of Complexing/Chelating Agents in Copper CMP Slurries

Published online by Cambridge University Press:  01 February 2011

Udaya B. Patri ,
S. Pandija  and
S.V. Babu
Udaya B. Patri
Affiliation:
Department of Chemical Engineering, Center for Advanced Materials Processing, Clarkson University, Potsdam, NY 13699
S. Pandija
Affiliation:
Department of Chemical Engineering, Center for Advanced Materials Processing, Clarkson University, Potsdam, NY 13699
S.V. Babu
Affiliation:
Department of Chemical Engineering, Center for Advanced Materials Processing, Clarkson University, Potsdam, NY 13699
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Abstract

The role of the molecular structure - different functional groups, the length of the carbon chain and the relative positions of different functional groups – of several complexing/chelating agents (acetic acid, glycine, ethylene diamine, succinic acid, alanine and amino butyric acid (ABA)) in controlling copper (Cu) removal rates was investigated. The results are consistent with the known activity of –COOH groups at acidic conditions and that of –NH2 groups in an alkaline environment. In comparison with glycine, it was also observed that an increase in the carbon chain length increased the removal rates at acidic pH values and decreased the removal rates at alkaline pH values. Also, Cu removal rates decreased with an increase in the distance between the –NH2 and –COOH groups in an amino acid at all pH values except at 4.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 867: Symposium W – Chemical-Mechanical Planarization-Integration, Technology and Reliability , 2005 , W1.11
Copyright
Copyright © Materials Research Society 2005

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References

1. Chemical-Mechanical Planariation, MRS Spring Meeting Proceedings, Vol. 732E, S. Babu, V., Singh, R., Hayasaka, N. and Oliver, M., Eds (2002)Google Scholar
2. Chemical-Mechanical Polishing: Advances and Future Challenges, MRS Spring Meeting Proceedings, Vol. 671, Babu, S. V., Cadien, K. C. and Yano, H., Eds (2001)Google Scholar
3. Hirabayashi, H., Higuchi, M., Kinoshita, M., Kaneko, H., Hayasaka, N., Mase, K., and Oshima, J., in Proceedings of CMP-MIC Conference, p. 119, Santa Clara, CA (1996).Google Scholar
4. Hariharaputhiran, M., Zhang, J., Ramarajan, S., Keleher, J. J., Li, Y., and Babu, S. V., J.Electrochem. Soc., 147(10), 3820–3826 (2000).Google Scholar
5. Aksu, S. and Doyle, F. M., J. Electrochem. Soc., 149(6), G352–G361 (2002).Google Scholar
6. Seal, S., Kuiry, S. C. and Heinmen, B., Thin Solid Films, 423, 243–251 (2003).Google Scholar
7. Gorantla, Venkata and Babu, S. V., Proceedings of the MRS Spring Meeting, F6.7, April 2003.Google Scholar
8. Gorantla, V., Matijeviæ, E. and Babu, S. V., presented at The AICHE Annual Meeting, Austin, TX, Nov. 2004 (unpublished).Google Scholar
9. Gorantla, V., PhD. Thesis, Clarkson University, 2004.Google Scholar
10. Amino acids as complexing agents during chemical mechanical planarization of Cu, V. R. K. Gorantla, Matijeviæ, E. and Babu, S. V., Chemistry of Materials (accepted)Google Scholar
11. Kondo, S., Sakuma, N., Homma, Y. and Ohashi, N., in Electrochemical Society Proceedings, Vol. 98-6, 195–205 (1998).Google Scholar
12. Eom, D.H., Hong, Y.K., Park, J.Y., Park, J.G., Myung, J. J., Kim, K.S., Song, H.S., Park, H.S., Choi, Y.S., Song, S.Y., and Lee, S.I., in Chemical-Mechanical Planarization-V, edited by Seal, S., Opila, R. L., Simpson, C. R., Sundaram, K., Huff, H. and Suni, I. I. (The Electrochem. Soc. Proc., PV2002-1, Boston, MA, 2002) p. 226.Google Scholar
13. Aksu, S. and Doyle, F. M., J. Electrochem. Soc., 149(7) B340–B347 (2002).Google Scholar
14. Jayashankar, J., Patri, U. and Johns, E., presented at the 203rd meeting of The Electrochemical Society, Apr-May 2003 (unpublished).Google Scholar
15. Hariharaputhiran, M., Li, Y., Ramarajan, S. and Babu, S. V., Electrochem. Solid-State. Lett., 3(2), 95 (2000).Google Scholar
16. Stegerwald, J. M., Murarka, S. P., and Gutmann, R. J., Chemical-Mechanical Planarization of Microelectronic Materials (John Wiley and Sons, New York, 1997), p. 226.Google Scholar