Hostname: page-component-77f85d65b8-g4pgd Total loading time: 0 Render date: 2026-03-29T02:35:36.619Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Pb(Zr0.40Ti0.60)O3/SrRuO3 and PbTiO3/SrRuO3 Multilayer Thin Films Prepared by MOCVD and Rf Sputtering

Published online by Cambridge University Press:  15 February 2011

C.M. Foster ,
R. Csencsits ,
P.M. Baldo ,
G.R. Bai ,
Z. Li ,
L.E. Rehn ,
L.A. Wills ,
R. Hiskes ,
P. Dimos  and
M.B. Sinclair
C.M. Foster
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439
R. Csencsits
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439
P.M. Baldo
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439
G.R. Bai
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439
Z. Li
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439
L.E. Rehn
Affiliation:
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, IL 60439
L.A. Wills
Affiliation:
Hewlett Packard Laboratories, Hewlett-Packard Company, 3500 Deer Creek Road, Palo Alto, CA 94304
R. Hiskes
Affiliation:
Hewlett Packard Laboratories, Hewlett-Packard Company, 3500 Deer Creek Road, Palo Alto, CA 94304
P. Dimos
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
M.B. Sinclair
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Get access

Abstract

Epitaxial SrRuO3 thin films were deposited by RF sputtering on SrTiO3 or MgO substrates for use as underlying electrodes. On these conductive substrates, epitaxial Pb(Zr0.35Ti0.65)O3 (PZT) and PbTiO3 (PT) thin films were deposited by metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD), RBS channeling (RBS), transmission electron microscopy (TEM) and optical waveguiding were used to characterize the phase, microstructure, defect structure, refractive index, and film thickness of the deposited films. The PZT and PT films were epitaxial and c-axis oriented. 90° domains, interfacial misfit dislocations and threading dislocations were the primary structural defects, and the films showed a 70% RBS channelling reduction. Hysteresis and dielectric measurements of epitaxial PZT ferroelectric capacitor structures formed using evaporated Ag or ITO glass top electrode showed: a remanent polarization of 46.2 μC/cm2 a coercive field of 54.9 kV/cm, a dielectric constant of 410, a bipolar resistivity of ∼5.8×109 ω-cm at a field of 275 kV/cm, and a breakdown strength of >400 kV/cm.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 307
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. For example see, Ferroelectric Thin Films III, ed. Myers, E.R., Tuttle, B.A., Desu, S.B., and Larsen, P.K., (Mat. Res. Soc. Symp. Proc. Vol. 310, San Francisco, CA 1993).Google Scholar
2. Brierley, C.J., Trundle, C., Considine, L., Whatmore, R.W., and Ainger, F.W., Ferroelectrics 90, 181 (1989);Google Scholar
Kingon, A.I., Hsieh, K.Y., King, L.L., Rou, S.H., Backmann, K.J., and Davis, R.F., in Ferroelectric Thin Films, ed. by Myers, E.R. and Kingon, A.I., (Mat. Res. Soc. Symp. Proc. Vol. 200, Pittsburg, PA 1990);Google Scholar
Katayama, T., Fuzimoto, M., Shimizu, M., and Shiosaki, T., Jpn. J. Appl. Phys. 30, 2189 (1991).Google Scholar
3. Bai, G.R., Chang, H.L.M., Kim, H.K., Foster, C.M., and Lam, D.J., Appl. Phys. Lett 64, 408 (1992);Google Scholar
Gao, Y., Bai, G., Merkle, K.L., Shi, Y., Chang, H.L.M., Shen, Z., and Lam, D.J., J. Mater. Res. 8, 145 (1993).Google Scholar
4. Bai, G.R., Chang, H.L.M., Foster, C.M., Shen, Z., and Lam, D.J., J. Mater. Res. 9, 156 (1994).Google Scholar
5. You, H., Chang, H.L.M., Chiarello, R.P., and Lam, D.J., in Heteroepitaxy of Dissimilar Materials, ed. by Ferrow, R.F.C., Harbison, J.P., Peercy, P.S., and Zangwill, A. (Mat. Res. Soc. Symp. Proc. Vol. 221 Pittsburg, PA 1990) p. 181.Google Scholar
6. Foster, C.M., Li, Z., Bai, G.R., You, H., Guo, D., and Chang, H.L.M., in Epitaxial Oxide Thin Films and Heterostructures. ed. Fork, D.K., Phillips, J.M., Ramesh, R., and Wolf, R.M., (Mat. Res. Soc. Symp. Proc. Vol. 341, San Francisco, CA 1994).Google Scholar
7. Foster, C.M., Li, Z., Buckett, M., Miller, D., Baldo, P.M., Rehn, L.E., Bai, G.R., Guo, D., You, H. and Merkle, K.L., (submitted to J. Appl. Phys.).Google Scholar
8. Wills, L.A. and Amano, J., in Ferroelectric Thin Films IV (this work), presented at the 1994 Fall MRS Meeting, Boston, MA 1994).Google Scholar
9. Foster, C.M., Chan, S.-K., Chang, H.L.M., Chiarello, R.P., Zhang, T.J., Guo, J., and Lam, D.J., J. Appl. Phys. 73, 7823 (1993).Google Scholar
10. Sharma, R.P., Rehn, L.E., Baldo, P.M., and Liu, J.Z., Phys. Rev. Lett. 62, 2869 (1989).Google Scholar