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CdSe Sensitized ZnO nanowire/polymer based p-i-n Heterojunction Solar Cell

Published online by Cambridge University Press:  31 January 2011

Athavan Nadarajah ,
Robert C Word  and
Rolf Koenenkamp
Athavan Nadarajah
Affiliation:
nadaraja@pdx.edu, Portland State University, Physics, Portland, Oregon, United States
Robert C Word
Affiliation:
wordr@pdx.edu, Portland State University, Physics, Portland, Oregon, United States
Rolf Koenenkamp
Affiliation:
rkoe@pdx.edu, Portland State University, Physics, Portland, Oregon, United States
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Abstract

We report a novel hybrid p-i-n heterojunction solar cell consisting of an undoped CdSe quantum dot film sandwiched between electrodeposited n-type ZnO nanowires on a compact ZnO thin film/FTO and a spin-coated hole-conducting layer. Microscopic studies show the conversion of CdSe quantum dots into conformal and continuous polycrystalline thin film coatings on ZnO nanowires upon annealing in CdCl2/ambient air. The morphology change of the CdSe quantum dot layers then provided excellent charge transfer between the absorber layer and the contiguous layers. The quantum-dot-sensitized ZnO nanostructured solar cells exhibited short-circuit current densities ranging from 5 to 10 mA/cm2 and open-circuit voltages of 0.4–0.6 V when illuminated with an 85 mW/cm2 quartz-halogen spectrum. External quantum efficiencies as high as 55–60% were also achieved.

Keywords

electrodepositionphotovoltaicnanostructure

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References

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