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Effects of Aluminum Implantation on the Oxidation Behavior of Silicon Nitride in a Sodium Nitrate-Oxygen Gas Mixture

Published online by Cambridge University Press:  03 September 2012

Y. Cheong ,
H. Du  and
S. P. Withrow
Y. Cheong
Affiliation:
Department of Materials Science and Engineering, Stevens Institute of Technology, Hoboken, NJ 07030
H. Du
Affiliation:
Department of Materials Science and Engineering, Stevens Institute of Technology, Hoboken, NJ 07030
S. P. Withrow
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
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Abstract

The role of aluminum in negating the adverse effect of alkali species on the oxidation resistance of Si3N4 ceramics was investigated by exposing unimplanted and aluminum-implanted (1 and 5 at.%) Si3N4 samples to a sodium nitrate (95 ppm)-dry oxygen gas mixture at 1. atm and at 900°1100°C. Oxidation of unimplanted Si3N4 was rapid and linear with an activation energy of 57 kJ/mol. In contrast, samples implanted with aluminum exhibited a considerably reduced oxide growth which was parabolic in nature with activation energies of 103–112 kJ/mol. The morphological characteristics of the oxide layer also showed marked improvement as the aluminum concentration increased.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 665
Copyright
Copyright © Materials Research Society 1997

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