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The effects of sulfuric acid on the mechanical properties of ice single crystals

Published online by Cambridge University Press:  08 September 2017

Y. L. Trickett
Affiliation:
Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755, U.S.A.
I. Baker
Affiliation:
Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755, U.S.A.
P. M. S. Pradhan
Affiliation:
Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755, U.S.A.
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Abstract

Ice single crystals of various orientations containing various concentrations of H2SO4 up to 11.5 ppm were cut from large pucks of laboratory-grown ice. Constant-strain-rate compression tests were performed on the doped ice crystals both at −20°C at an axial strain rate of 1 × 10−5 s−1 and at −10°C at 1 × 106 s−1. The stress–strain curves showed a linearly rising stress with increasing strain, followed by a sharply declining stress after reaching a peak. With further strain, the sharp decline in stress slowed. The tests clearly showed, for the first time, that this naturally occurring impurity dramatically decreases both the peak stress and the subsequent flow stress of ice single crystals. The decrease in the peak strength was related to the square root of the concentration of H2SO4 up to 11.5 ppm, suggesting that the solubility limit of H2SO4 in ice is at least 11.5 ppm. The sulfuric acid also appeared to increase the ductility of the ice. Preliminary examination of a doped ice single crystal by synchrotron X-ray topography suggested that sulfuric acid dramatically increases the grown-in dislocation density.

Information

Type
Research Article
Copyright
Copyright © International Glaciological Society 2000
Figure 0

Fig. 1. Engineering stress–strain curves for undoped and H2SO4-doped (0.1 ppm) ice single crystals with θ = 80° at −10°C and an axial strain rate of 1 x 10−6 s−1.

Figure 1

Fig. 2. Comparison between the engineering stress–strain curves for pure and H2SO4-doped ice single crystals of various concentration with θ = 3° at an axial strain rate of 1 × 10−5 −1 at −20°C.

Figure 2

Fig. 3. Comparison between the engineering stress–strain curves for pure and H2SO4-doped (4.4 ppm) ice single crystals with θ = 33° at an axial strain rate of 1 × 10−5 s−1at −20°C. The curves are offset along the strain axis for clarity.

Figure 3

Fig. 4. Graph of the difference in CRSS (peak stress) between undoped ice and H2SO4-doped ice crystals at θ = 3° vs the square root of the concentration of H2SO4 for crystals compressed at −20° C normalized to a shear strain rate of 1 × 10−5 s−1.

Figure 4

Fig. 5. Comparison between the resolved shear stress–strain curves for H2SO4-doped (4.4 ppm) ice single crystals with θ = 3° normalized to a shear strain rate of 1 × 10−5 s−1 at −20°C.

Figure 5

Fig. 6. Comparison between the resolved shear stress–strain curves for H2SO4-doped (6.8 ppm) ice single crystals with θ = 3° and 25° normalized to a shear strain rate of 1 × 10−5 s−1 at −20°C.

Figure 6

Fig. 7. Comparison between the engineering stress–stain curves at an axial strain of 1 × 10−5 s−1 at −20 for pure and H2SO4-doped (6.8 ppm) ice single crystal with θ = 25.

Figure 7

Fig. 8. Graph of the peak CRSS for pure ice and for H2SO4-doped ice with various dopant levels (indicated) and orientations at −20°C normalized to a shear strain rate on the basal slip plane of 1 × 10−5 s−1.

Figure 8

Fig. 9. X-ray topograph showing a sub-grain which satisfied the operating diffraction conditions in a specimen doped with 11 ppm of H2SO4. The dislocation density was estimated to be > 1 × 1010 m−2.