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The Merits of Integrated Processing for Gate Stack Formation

Published online by Cambridge University Press:  15 February 2011

John M. Grant
John M. Grant*
Affiliation:
Sharp Microelectronics Technology, Inc., 5700 NW Pacific Rim Boulevard, Camas, WA 98607
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Abstract

This work presents the results of process development in a cluster tool designed for the gate stack process of cleaning, gate oxidation, and polysilicon chemical vapor deposition. The cluster tool connects three single wafer process chambers together with a vacuum transfer chamber. The purpose of this work was to test the feasibility of the single wafer processing gate oxidation cluster tool from an electrical performance standpoint, Cleaning was performed using a gas/vapor phase process, and the results using a standard oxide indicate that gas/vapor phase cleaning is at the least comperable and possibly more effective at contamination removal than the standard RCA wet cleaining process. The oxidation was performed using rapid thermal processing, and the effect of adding nitrogen to the oxide by oxidation in an N2O containing ambient was tested. The results indicated that oxides at least at good as those grown in a conventional furnace could be produced in the cluster tool, and the nitrogen at the oxide-substrate interface improves the reliability of the oxide if the nitrogen concentration is kept below 1 atomic %.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 175
Copyright
Copyright © Materials Research Society 1995

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