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Comparison Study for TiN Films Deposited from Different Method: Chemical Vapor Deposition and Atomic Layer Deposition

Published online by Cambridge University Press:  21 March 2011

Byoung-Youp Kim ,
Seung-Hyun Lee ,
Sang-Gee Park ,
Ki-Young Oh ,
Juho Song  and
Do-Heyoung Kim
Byoung-Youp Kim
Affiliation:
ALD Team, CVD Div., Jusung Engineering Co. Ltd. #49 Neungpyeong-Ri, Opo-Myeun, Kwangju-Si, Kyunggi-Do
Seung-Hyun Lee
Affiliation:
ALD Team, CVD Div., Jusung Engineering Co. Ltd. #49 Neungpyeong-Ri, Opo-Myeun, Kwangju-Si, Kyunggi-Do
Sang-Gee Park
Affiliation:
ALD Team, CVD Div., Jusung Engineering Co. Ltd. #49 Neungpyeong-Ri, Opo-Myeun, Kwangju-Si, Kyunggi-Do
Ki-Young Oh
Affiliation:
ALD Team, CVD Div., Jusung Engineering Co. Ltd. #49 Neungpyeong-Ri, Opo-Myeun, Kwangju-Si, Kyunggi-Do
Juho Song
Affiliation:
ALD Team, CVD Div., Jusung Engineering Co. Ltd. #49 Neungpyeong-Ri, Opo-Myeun, Kwangju-Si, Kyunggi-Do
Do-Heyoung Kim
Affiliation:
Faculty of Applied Chemistry, College of Engineering, Chonnam National University 300 Yongbong-dong, Buk-Ku, KwangJu 500-757, Korea
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Abstract

This paper compared two different film deposition processes for formation of TiN barrier layers, conventional TiCl4-based chemical vapor deposition and atomic layer deposition (ALD). The 30nm thick TiN film deposited by conventional TiCl4-based CVD at the process temperature of 600°C followed by NH3 post-deposition anneal showed about 180 μΩcm of resistivity, over 95 % of step coverage for the pattern aspect ratio of 6 on 0.35 μm contact diameters, and below 2 at.% of chlorine contents in the film. Meanwhile, the films deposited by ALD at 100°C lower process temperature than CVD showed much better film properties even without post-deposition anneal. It showed lower resistivity values and lower chlorine incorporation along with better step coverage characteristics. More detailed material analysis was done by AFM, SEM, and AES.

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References

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