Hostname: page-component-6766d58669-h8lrw Total loading time: 0 Render date: 2026-05-20T07:14:07.186Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of Surface Acoustic Waves in AlN And GaN

Published online by Cambridge University Press:  11 February 2011

Jianyu Deng ,
Daumantas Ciplys ,
Gang Bu ,
Michael Shur  and
Remis Gaska
Jianyu Deng
Affiliation:
Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, U.S.A.
Daumantas Ciplys
Affiliation:
Department of Radiophysics, Vilnius University, Vilnius 2040, Lithuania Department of Electrical, Computer, and Systems Engineering and Center for Integrated Elelectronics, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
Gang Bu
Affiliation:
Department of Electrical, Computer, and Systems Engineering and Center for Integrated Elelectronics, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
Michael Shur
Affiliation:
Department of Electrical, Computer, and Systems Engineering and Center for Integrated Elelectronics, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
Remis Gaska
Affiliation:
Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, U.S.A.
Get access

Abstract

The surface acoustic wave velocities, electromechanical coupling coefficients, and the spatial distributions of both elastic displacement and electric potential have been calculated for various configurations of gallium nitride and aluminum nitride. The electromechanical coupling coefficient values of 0.13 % in GaN and 0.29 % in AlN have been predicted. The maximum electromechanical coupling coefficient values of 0.24 % at Euler angles (0, 54°, 90°) in GaN and 1.08 % at (0, 53°, 90°) in AlN have been found. For GaN layer-on- sapphire substrate structures, the SAW velocity and electromechanical coupling coefficient have been calculated as functions of layer thickness and acoustic wavelength. The experimentally measured values of the surface acoustic wave velocity and electromechanical coupling coefficient are in satisfactory agreement with the calculation results.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L6.36
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Ciplys, D., Rimeika, R., Shur, M. S., Rumyantsev, S., Gaska, R., Sereika, A., Yang, J., Khan, M. A., Appl. Phys. Lett. 80, 2020 (2002)Google Scholar
2. Ciplys, D., Rimeika, R., Shur, M. S., Gaska, R., Deng, J., Yang, J. W., Khan, M. A., Appl. Phys. Lett. 80, 1701 (2002)Google Scholar
3. Farnell, G. W., Adler, E. L., Elastic Wave Propagation in Thin Layers, Physical Acoustics, Principles and Methods, edited by Mason, W. P., Thurston, R. N., Vol. IX (Academic Press, 1972)Google Scholar
4. Levinshtein, M. E., Rumyantsev, S. L., Shur, M. S., Properties of Advanced Semiconductor Materials, GaN, ALN, InN, BN, SiC, SiGe (John Wiley & Sons, 2001)Google Scholar
5. Royer, D., Dieulesaint, E., Elastic Waves in Solids I, Free and Guided Propagation, (Springer, 1996).Google Scholar
6. Camou, S., Pastureaud, Th., Schenk, H. P. D., Ballandra, S., Laude, V., Guided Elastic Waves in GaN-on-Sapphire, Electron. Lett. 37, 1053 (2001).Google Scholar
7. Campbell, C. K., Surface Acoustic Wave Devices for Mobile and Wireless Communication, pp125–6 (Academic Press, San Diego, 1998).Google Scholar