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In-Situ Ellipsometric Monitoring of the Electron Cyclotron Resonance Etching of Diamond-Like Carbon

Published online by Cambridge University Press:  22 February 2011

N.J. Ianno ,
S. Ahmer ,
S. Pittal  and
John A. Woollam
N.J. Ianno
Affiliation:
Center for Microelectronic and Optical Materials Research, and Dept. of Electrical Engineering, University of Nebraska, 209N WSEC, Lincoln, NE 68588–0511
S. Ahmer
Affiliation:
Center for Microelectronic and Optical Materials Research, and Dept. of Electrical Engineering, University of Nebraska, 209N WSEC, Lincoln, NE 68588–0511
S. Pittal
Affiliation:
J.A. Woollam Co., Inc., 650 J Street, Suite 39, Lincoln, NE 68508
John A. Woollam
Affiliation:
J.A. Woollam Co., Inc., 650 J Street, Suite 39, Lincoln, NE 68508
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Abstract

The electron cyclotron resonance (ECR) etching of diamond-like carbon films in an oxygen plasma has been studied. The input variables were flow rate, pressure, power, and bias, while the output parameters were etch rate, and uniformity. In-situ ellipsometry, performed at 44 wavelengths simultaneously, was employed to monitor the etch process in real time. We will show that DLC films can be etched without an applied bias, but the application of an rf induced dc bias greatly enhances etch uniformity. Further, the etch rate is a strong function of the bandgap of the DLC film.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 349: Symposium T – Novel Forms of Carbon II , 1994 , 535
Copyright
Copyright © Materials Research Society 1994

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References

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