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Search for Ion Induced Mixing in Ceramic-Ceramic Systems

Published online by Cambridge University Press:  21 February 2011

K.R. Padmanabhan
K.R. Padmanabhan*
Affiliation:
Department of Physics, Wayne State University, Detroit, Michigan 48201
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Abstract

Thin sputtered ceramic films deposited on ceramic substrates were subjected to either Kr+ or Xe+ ion bombardment for ion beam mixing studies in ceramic-ceramic systems. The amount of mixing if any was evaluated from Rutherford backscattering and Auger electron spectroscopy. In some instances ceramic films were deposited on epitaxial films or single crystal substrates for ion channeling analysis. No significant mixing was observed in any of the systems with ZrC. However, analysis of the interface in Si3N4/ SiC system indicates appreciable mixing and ion beam induced damage to the substrate. The mixing appears to be dose dependent for heavier ions.

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