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Magnetic Field Sensors based on Magnetoresistance Effect in Organic Semiconductor Sandwich Devices

Published online by Cambridge University Press:  26 February 2011

Govindarajan Veeraraghavan ,
Ömer Mermer ,
Yugang Sheng ,
Tho Duc Nguyen ,
Thomas Lee Francis  and
Markus Wohlgenannt
Govindarajan Veeraraghavan
Affiliation:
gveerara@engineering.uiowa.edu, University of Iowa, 188 IATL, University of Iowa, Iowa City, Iowa, 52246, United States
Ömer Mermer
Affiliation:
omer-mermer@uiowa.ed, University of Iowa, Department of Physics and Astronomy, United States
Yugang Sheng
Affiliation:
yugang-sheng@uiowa.edu, University of Iowa, Department of Physics and Astronomy, United States
Tho Duc Nguyen
Affiliation:
emailtho01@yahoo.com, University of Iowa, Department of Physics and Astronomy
Thomas Lee Francis
Affiliation:
thomasleefrancis@yahoo.com, University of Iowa, OMR sensors Inc., Department of Electrical and Computer Engineering, United States
Markus Wohlgenannt
Affiliation:
markus-wohlgenannt@uiowa.edu, University of Iowa, Department of Physics and Astronomy, United States
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Abstract

We describe magnetic field sensors based on a recently discovered magnetoresistance (MR) effect in nonmagnetic organic semiconductor sandwich devices. The MR effect reaches up to 10% in a magnetic field of 10 mT at room temperature. We perform an extensive experimental characterization of this effect. We found that the MR effect is only weakly temperature dependent and does not depend on sign and direction of the applied magnetic field. We also measured the device response to alternating magnetic fields up to 100 kHz. To the best of our knowledge, the discovered MR effect is not adequately described by any of the MR mechanisms known to date.

Keywords

magnetoresistance (transport)organicsensor

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 906: Symposium HH – Magnetic Sensors and Sensing Systems , 2005 , 0906-HH03-07
Copyright
Copyright © Materials Research Society 2006

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