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First-principles Study of Bias Effect on Magnetoresistance of Fe/MgO/Fe Tunnel Junctions

Published online by Cambridge University Press:  09 May 2013

Ning Deng  and
Hongguang Cheng
Ning Deng
Affiliation:
Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China
Hongguang Cheng
Affiliation:
Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China
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Abstract

We studied the transport properties of the Fe/MgO/Fe and Fe/Ag/MgO/Ag/Fe magnetic tunnel junctions (MTJs) with 13-layer MgO barrier under bias voltage based on first-principles calculations. Our results showed that two features determine the TMR value decreases with bias of Fe/MgO/Fe MTJ: (1) interfacial states lying at 1.06 eV in spin down channel (2) the energy level of the spin down Δ1 band of the Fe electrode. Our results showed that an inserted Ag mono-layer at Fe/MgO interface can remarkably improve the TMR effect at a high bias voltage.

Keywords

magnetoresistance (transport)spintronicbarrier layer

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