Hostname: page-component-6766d58669-7cz98 Total loading time: 0 Render date: 2026-05-16T07:06:45.174Z Has data issue: false hasContentIssue false
  • English
  • Français

Blanket and Selective Copper CVD from Cu (Fod)2 For Multilevel Metallization

Published online by Cambridge University Press:  25 February 2011

Alain E. Kaloyeros ,
Arjun N. Saxena ,
Kenneth Brooks ,
Sumanta Ghosh  and
Eric Eisenbraun
Alain E. Kaloyeros
Affiliation:
Physics Department, The University at Albany-SUNY, Albany, NY 12222
Arjun N. Saxena
Affiliation:
Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12084
Kenneth Brooks
Affiliation:
Chemistry Department, University of Illinois at Urbana-Champaign, Urbana, IL 61801
Sumanta Ghosh
Affiliation:
Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12084
Eric Eisenbraun
Affiliation:
Physics Department, The University at Albany-SUNY, Albany, NY 12222
Get access

Abstract

As the focus of integration technology inevitably shifts from the present very large scale integration (VLSI) to ultra large scale integration (ULSI) schemes, thus leading to continuous decrease in circuit dimensions, the limitations of present multilevel metallization technologies become increasingly important. Because of the appreciably higher speeds and more complex multi-functional layering involved in the newest ULSI circuits, the electrical resistance and capacitance of presently used interconnects and their electromigration and stress resistance stand as major limiting factors to signal processing throughput. In this paper, some recent results achieved by the present investigators in their studies of blanket and selective low-temperature metal-organic chemical vapor deposition (LTMOCVD) of copper for potential use in multilevel metallizations in ULSIC’s are presented. The films were produced at 300–400°C in atmospheres of pure H2 or Ar from the β-diketonate precursor bis(6, 6, 7,7, 8, 8, 8-heptafluoro-2, 2-dimethy1-3, 5-octanediono)copper(II), Cu(fod)2. The films were analyzed by x-ray diffraction (XRD), Rutherford Backscattering (RBS), Auger electron spectroscopy (AES), scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDXS), and four-point resistivity probe. The results of these studies showed that films deposited on metallic substrates were uniform, continuous, adherent, highly pure, and exhibited very low resistivity, as low as 1.8 μΩcm for films deposited in pure H2 atmosphere. Preliminary investigations of selective LTMOCVD of copper showed that selectivity is indeed possible, but is a function of a wide range of parameters that include reactor geometry, substrate type and temperature, working pressure, type of carrier gas, and precursor chemistry.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 79
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1 See, for instance, VLSI Technology: Fundamentals and Applications, edited by Y. Tarui (Springer-Verlag, Berlin, 1986), p.308.Google Scholar
2 Saxena, A.N., Keynote Address in the Proceedings of the First International IEEE Conference on VLSI Multilevel Interconnections, IEEE Catalog#84CH1999–2, June 21–22, 1984, p.l.Google Scholar
3 Saxena, A.N., in Proceedings of the Seminar on VLSI State-of-the Art Multilevel Interconnection, (Santa Clara, CA, 1989) p.2.Google Scholar
4 Pramanik, D. and Saxena, A.N., Solid State Technology 33, 73 (1990).Google Scholar
5 Saxena, A.N., Keynote Adress of 1st International Workshop on Tungsten and Other Refractory Metals for VLSI Applications (MRS, Pittsburgh, 1986).Google Scholar
6 Yung, E. K., Romankiw, L.T., and Alkire, R.C., J. Electrochem. Soc. 136, 206 (1989).CrossRefGoogle Scholar
7 Shumay, W. C. Jr. Advanced Materials Processes 135, 43 (1989).Google Scholar
8 Awaya, N. and Arita, Y., In the Proceedings of the 1989 Symposium on VLSI Technology, Digest of Technical Papers, 1989, to be published.Google Scholar
9 Jeffries, P.M. and Girolami, G.S., Chemistry of Materials 1, 8 (1989).CrossRefGoogle Scholar
10 Oehr, C. and Suhr, H., Appl. Phys. A45, 151 (1988).Google Scholar
11 Temple, D. and Reisman, A., J. Electrochemical Soc. 136, 3525 (1989).CrossRefGoogle Scholar
12 Van Hemert, R.L., Spendlove, L.B., and Sievers, R.E., J. Electrochem. Soc. 112, 1123 (1965).CrossRefGoogle Scholar
13 Trundle, C. and Brierley, C. J., Appl. Surf. Sci. 36, 102 (1989).CrossRefGoogle Scholar
14 Poston, S. and Reisman, A., J. Electronic Materials 18, 79 (1989).CrossRefGoogle Scholar
15 Jones, C.R., Houle, F.A., Kovac, C.A., and Baum, T.H., Appl. Phys. Lett. 46, 97 (1985).CrossRefGoogle Scholar
16 Kaloyeros, A.E., Feng, A., Garhart, J., Ghosh, S., Saxena, A., and Luehrs, F., J. Electron. Mater. 19, 271 (1990).CrossRefGoogle Scholar