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Demonstration of the state-of-the-art of formation and characterization of ultra-shallow junctions

Published online by Cambridge University Press:  21 March 2011

P. Borden ,
A. Al-Bayati ,
J. Madsen ,
C. Lazik ,
P. Carey ,
L. Bechtler  and
A. Mayur
P. Borden
Affiliation:
Boxer Cross Inc., 978 Hamilton Court Menlo Park, CA 94025, USA
A. Al-Bayati
Affiliation:
Applied Materials, 3050 Bowers Ave. Santa Clara, CA 95054, USA
J. Madsen
Affiliation:
Boxer Cross Inc., 978 Hamilton Court Menlo Park, CA 94025, USA
C. Lazik
Affiliation:
Applied Materials, 3050 Bowers Ave. Santa Clara, CA 95054, USA
P. Carey
Affiliation:
Applied Materials, 3050 Bowers Ave. Santa Clara, CA 95054, USA
L. Bechtler
Affiliation:
Boxer Cross Inc., 978 Hamilton Court Menlo Park, CA 94025, USA
A. Mayur
Affiliation:
Applied Materials, 3050 Bowers Ave. Santa Clara, CA 95054, USA
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Abstract

Doping process windows are becoming very narrow as VLSI technology nodes scale to smaller and smaller dimensions. The time and cost required to develop new doping methods and the desire to re-use equipment will make it likely that current methods will be applied as long as possible. This means that existing process tools will have very tight stability and uniformity requirements, and metrology will be required to drive process control. The paper describes the state-of-the-art of both doping processes involving ion implantation and spike annealing, and new metrology based on Carrier IlluminationTM methods that will be required to implement in-line process control for these processes. CI offers depth resolution on the order of1Å, providing a level of control required to extend existing doping methods. The prospects of new methods such as Laser Thermal Annealing (LTA) are also discussed.

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References

REFERENCES

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