Concentration profiles of channeling and random implants of boron, phosphorus, and arsenic in silicon are compiled from the literature and are analyzed using Monte Carlo simulations. An empirical 3-parameter model of the electronic stopping power is found which yields excellent results for all channeling directions in the energy range of about 20 keV to 1 MeV. The model contains a local impact parameter dependent part and a nonlocal part, the latter increasing with ion energy. In addition, local electron density dependent stopping power models are investigated, using a realistic electron density distribution obtained by first principles band structure calculations. These models fail to describe the slowing down of ions channeled along the <110> axis.