In this paper, we have investigated the Burstein-Moss shift(BMS) in QDs of III-V, II-VI and IV-VI semiconductors in the presence of a parallel magnetic field on the basis of newly formulated carrier disperson laws. It is found, taking QDs of InSb, Cds and CdTe as examples that the BMS increases with increasing doping and decreasing film thickness in ladder like manners. The numerical values of the BMS in QDs are much greater than that of their corresponding values for bulk specimens. The theoretical results as presented here are in agreement with the experimental observations as reported in literature.

In this paper we have studied the dia and paramagentic susceptibilities of the holes in ultrathin films of magnetic materials in the presence of a parallel magentic field on the basis of a newly derived dispersion law for such systems. The numerical computations are performed taking Hg1-xMnx Te and Cd1-xMnx Se as examples. Both the susceptibilities increses with decreasing doping and film thickness respectively. It is important to note that not only the paramagnetic-to-diamagnetic susceptibility ratio for the present case deviates from (1/3) in conventional semiconductors, but also that is a critical region, where quenching of the diamagnetic occurs. The theoretical analysis is in agreement with the experimental datas as given elsewhere.

In this paper an attempt is made to study the electronic contribution to the elastic constants of strained III-V materials under high magnetic fields on the basis of k.p theory. It is found taking strained Hgi - x CdxTe and Ini - xGaxAsyPi-y lattice matched InP as examples that they increase with increasing doping and oscillate with inverse magnetic field respectively. The strain enhances the numerical values of the elastic constants. The theoretical formulation is in quantitative agreement with the suggested experimental method of determining the above contributions for degenerate materials having arbitrary dispersion laws. In addition, the well-known results for strain free wide gap materials in the absence of magnetic field have been obtained from our generalized analysis under certain limiting conditions.

In this paper we have studied the photoemission from quantum wells (QW), quantum wells wires (QWWs) and quantum dots (QDs) of quantum confined strained III–V compounds on the basis of a newly formulated electron dispersion law. It is found taking such quantum confined Hg1–xCdxTe and In1–xGaxAsyP1–y lattice matched InP as examples that the photoemission increases with increasing energy of the incident photons in a ladder like manner and also exhibits oscillatory dependences with changing electron concentration and film thickness respectively for all types quantum confinement. The photoemitted current is greatest in strained QDs and least in unstrained QWs. In addition the theoretical results are in agreement with the experimental datas as given elsewhere.

In this paper we have studied the photoemission from super-lattices of III-V semiconductors under magnetic quantization by formulating a new dispersion law. It is found, taking InAs/GaSb super-lattice with graded interfaces as an example that the photoemission, increases with increasing electron concentration in an oscillatory way and increases with decreasing magnetic field in the magnetic quantum limit. Besides, the photoemission in superlattices is much greater than that of the constituent materials and the well-known results for wide-gap materials have also been obtained from our generalized analysis. In addition, the theoretical analysis is in agreement with the experimental datas as given elsewhere.

In this paper we have studied the dia and paramagnetic susceptibilities of the holes in ultrathin films of dilute magnetic materials in the presence of a quantizing magnetic field and compared the same with that of the bulk specimens under magnetic quantization for the purpose of relative comparison. It is found, taking Hg1−xMnxTe and Cd1−xMnxSe as examples, that both the susceptibilities increase with decreasing film thickness and increasing surface concentration in oscillatory Manners. The numerical values of the susceptibilities in ultrathin films of dilute magnetic materials are greater than that of the bulk and the theoretical analysis is in agreement with the experimental data as reported elsewhere.

In this paper we have studied the Einstein relation for the diffusivity-mobility ratio in III-V superlattices with graded structures under magnetic quantization by formulating a new dispersion law. It is found, taking InAs/GaSb an example that the diffusivity mobility ratio increases in an oscillatory way with increasing carrier degeneracy as a consequence4SdH effect. The Einstein relation in IIIV superlattice is greater than that of the same for the constituent materials. Besides the theoretical results are in agreement with the suggested experimental method of determining the same ratio in degenerate materials having arbitrary dispersion laws.

In this paper we have investigated the carrier contribution to elastic constants in very thin films of stressed small gap compounds within the domain of theory. It is found, taking stressed ultrathin films Hg1-xCdxTe and In1-xGaxAsyP1-y lattice matched to InP as examples, that the elastic constants increase with increasing electron concentration and decreasing film thickness respectively in oscillatory manners. Besides the stress enhances the numerical values of such contribution to the elastic constants. In addition, the theoretical formulation is in agreement with the suggested experimental method of determining such constants in materials having arbitary dispersion laws.

in this paper we study the Einstein relation in superlattices of wide-band gap semiconductors under crossfield configuration and the for.-ning materials incorporating spin and broadening of Landau levels, it is found, taking GaAs/AÀAs superlattice as an example that the diffusivity-mobility ratio increases with increasing electron concentration and oscillates with inverse quantizing magnetic field due to SdH effect. Thetheoretical analysis is in agreement with the suggested experimental method of determining the same ratio in degenerate materials having arbitrary dispersion laws.

We study the Burstein-Moss shift (BMS) in quantum wiies and quantum dots of wide-gap semiconductors, taking Ge as an example, it is found that the BMS increases with increasing electron concentration in a ladder like manner. The numerical values of the BMS is greatest in quantum dots and least in quantum wells. The theoretical analysis is in agreement with the experimental results as given elsewhere.

In this paper we have studied the Einstein relation for the diffusivity-mobllity ratio (DMR) in small-gap superi at tices (SLS) with graded structures under magnetic quantization by formulating a new dispersion law. It is found, taking inAs/ GaSb SL as an example that the DMR increases in an oscillatory way with increasing carrier degeneracy due to SdH effect. The DMR in SL. is greater than that of the constituent materials. The theoretical results are in agreement with the suggested experimental method of determining the DMR in degenerate materials having arbitrary dispersion laws.

An attempt is made to study the thermoelectric power in ultrathin films of semiconductors under magnetic quantization by including all types of aniso tropies in the energy spectrum within the domain of theory, and taking n-Cd3As2 as an example. It is found that, the magne to-thermopower decreases with increasing surface electron concentration and also changes in an oscillatory manner with film thickness respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

In this paper, we have studied the photoemission from quantum wells (QWs),quantum well wires (QWWs) and quantum dots (QDs) of degenerate Kane-typesemiconductors, on the basis of a newly derived electron dispersion lawconsidering all types of anisotropies within the framework of k.p formalism.It is found, taking n-Cd3 As2 as an example, that thephotoemission increases with increasing photon energy in a ladder-likemanner and also exhibits oscillatory dependences with changing electronconcentration and with film thickness, for all types of quantum confinement.The photoemission current density is greatest in QDs and least in QWWs. Inaddition, the theoretical results are in agreement with the experimentalobservation as reported elsewhere.

We have studied the Einstein relation for the diffusivity. mobility ratio (7PT) on the basis of a newly derived electron energy spectrum in QW f tetragonal semiconductors, within the framework of K. P method by considering all types of anisotropies of the energy band parameters. It is found, taking n-Cd3 As2 as an example that the DUTZ increases with electron concentration and decreases with film thickness in an oscillatory manner respectively. The theoretical results are in good aoreement with the suggested experimental method of determining the DMR in degenerate semiconductors having arbitrary dispersion law.

We shall study the thermoelectric power under classically large magnetic field (TPM) in optoelectronic materials of quantum wells (QWs), quantum well wires (QWW's), quantum dots (QDs) and compare the same with the bulk specimens of optoelectronic materials by formulating the respective electron dispersion law. The TPM increases with decreasing electron concentration in an oscillatory manner in all the cases, taking n-Hg1−xCdxTe as an example. The TPM in QD is greatest and the least for quantum wells respectively. The thecoretical results are in agreement with the experimental observations as reported elsewhere.

We study the photomission from ternary and quanternary alloys systems by formulating the respective expressions considering the spin & broadening of Landau levels. It is found taking n-Hg1−x CdxTe and In1−xGaxAsyP1−y lattice matched to InP as examples of ternary and quaternary alloys respectively that the photoemission exhibits oscillatory magnetic field dependence and increases with increasing electron concentration in spiky manner for both the cases. The numerical magnitudes of photoemission in ternary alloys are greater than that of the quaternary systems and the theoretical formulations are in agreement with the experimental observations as reported elsewhere.

We shall study the thermoelectric power under classically large magnetic field (TPM) in optoelectronic materials of quantum wells (QWs), quantum well wires (QWW’s), quantum dots (QDs) and compare the same with the hulk specimens of optoelectronic materials by formulating the respective electron dispersion law. The TPM increases with decreasing electron concentration in an oscillatory manner in all the cases, taking n-Hg1-xC dxTe as an example. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

In this paper we studied the thermoelectric power under classically large magnetic field (TPM) in quantum wells (QWs), quantum well wires (QWWS) and quantum dots (QDs) of Bi by formulating the respective electron dispersion laws. The TPM increases with increasing film thickness in an oscillatory manner in all the cases. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

In this paper, we studied the magneto-field emission from HgTe/Cdre superlattices with graded structure and compared the same with the bulk specimens of the constituent materials. It is found that the field emitted current density increases both with electron concentration and magnetic field in an oscillatory manner. The field emission in HgTe/CdTe SLi is greater than that of the same from constituent materials the theoretical results are in agreement with the experimental observation as reported elsewhere.