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We report measurements of the distribution of Sb atoms in σ-doped Si, over a wide 2-D concentration range. Both annular dark-field imaging and electron energy loss spectroscopy proved sufficiently sensitive to locate Sb atoms at the atomic scale. Improvements in both detector sensitivities and specimen preparation were necessary to achieve these results, which offer a surprising explanation for the dramatic difference in electrical activity between 2-D and 3-D dopant distributions at the same effective volume concentrations. The prospects for the general identification of individual dopant atoms will be discussed.

Near-edge-- and extended--x-ray absorption fine structure measurements, as well as luminescence excitation and emission spectra, were obtained from samples of porous Si and siloxene. Contrary to a recently proposed explanation for the room temperature luminescence in porous Si, the combined data indicate that siloxene is not principally responsible for the observed effect.

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Atomic-Scale Imaging of Dopant Atom Distributions Within Silicon δ-Doped Layers

Unimportance of Siloxene in Luminescent Porous Silicon as Determined by Nexafs & Exafs

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2 results

Atomic-Scale Imaging of Dopant Atom Distributions Within Silicon δ-Doped Layers

Unimportance of Siloxene in Luminescent Porous Silicon as Determined by Nexafs & Exafs