We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.
To save content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about saving content to .
To save content items to your Kindle, first ensure no-reply@cambridge.org
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
In recent years a number of intergovernmental initiatives have been activated in order to enhance the capacity of countries to improve access to essential medicines, particularly for mental disorders. In May 2013 the 66th World Health Assembly adopted the World Health Organization (WHO) Comprehensive Mental Health Action Plan 2013–2020, which builds upon the work of WHO's Mental Health Gap Action Programme. Within this programme, evidence-based guidelines for mental disorders were developed, including recommendations on appropriate use of medicines. Subsequently, the 67th World Health Assembly adopted a resolution on access to essential medicines, which urged Member States to improve national policies for the selection of essential medicines and to promote their availability, affordability and appropriate use.
Methods.
Following the precedent set by these important initiatives, this article presents eleven actions for improving access and appropriate use of psychotropic medicines.
Results.
A 4 × 4 framework mapping actions as a function of the four components of access – selection, availability, affordability and appropriate use – and across four different health care levels, three of which belong to the supply side and one to the demand side, was developed. The actions are: developing a medicine selection process; promoting information and education activities for staff and end-users; developing a medicine regulation process; implementing a reliable supply system; implementing a reliable quality-control system; developing a community-based system of mental health care and promoting help-seeking behaviours; developing international agreements on medicine affordability; developing pricing policies and a sustainable financing system; developing or adopting evidence-based guidelines; monitoring the use of psychotropic medicines; promoting training initiatives for staff and end-users on critical appraisal of scientific evidence and appropriate use of psychotropic medicines.
Conclusions.
Activating these actions offers an unique opportunity to address the broader issue of increasing access to treatments and care for mental disorders, as current lack of attention to mental disorders is a central barrier across all domains of the 4 × 4 access framework.
High power RF device performance decreases as operation temperature increases (e.g. decreasing electron mobility affects cut-off frequencies and degrades device reliability). Therefore determination of device temperature is a key issue for device topology optimisation. In this work the temperature variation of AlGaN/GaN high-electron-mobility transistors grown either on silicon or sapphire substrate under bias operation was measured by micro Raman scattering spectroscopy. Temperature measurements up to power dissipation of 16 W for 4 mm development devices were carried out and a peak temperature of 650 K was determined. The difference of thermal resistance for similar devices grown on the two different substrates was assessed. The thermal resistances of different device topologies were compared to optimise the component design.
The high power RF device performance decreases as the operation temperature increases (e.g. fall of electron mobility impacting the cut-off frequencies and degradation of device reliability). Therefore the determination of device temperature is a key issue for device topology optimisation. In this work the temperature variation of AlGaN/GaN high-electron-mobility transistors grown either on silicon or sapphire substrates under bias operation was measured by micro Raman scattering spectroscopy. The differences in thermal resistance for similar devices grown on the two different substrates were assessed. The thermal resistances of different device topologies were compared in order to optimise the component design. The temperature measurement across the gate and along the component fingers were made to quantify the thermal gradient of the device. Temperature measurement up to a power dissipation of 16 W for a 4 mm development device was carried out and the peak temperature of 650 K was determined.