Results are presented on the photoluminescence of n-GaN (T=300 K) after surface treatment with sulfide (Na2S and (NH4)2S) solutions in water or isopropyl alcohol.
It has been shown that the intensity of the n-GaN photoluminescence band is enhanced as a result of the surface treatment with alcoholic sulfide solutions, this enhancement being greater for a strongly basic Na2S solution than for a weakly basic (NH4)2S solution.