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Enhanced Diffusion in Silicon Processing

Published online by Cambridge University Press:  31 January 2011

Nicholas Cowern  and
Conor Rafferty
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Semiconductor-grade silicon is one of the most perfect crystalline materials that can be fabricated. It contains less than 1 ppb of unintended impurities and negligible twins or dislocations. Dopants can diffuse in this near-ideal crystal only by interacting with atomic-scale point defects: interstitial atoms or vacancies. These defects migrate through the silicon lattice, occasionally binding with a dopant atom and displacing it by one or more lattice positions.

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Research Article
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MRS Bulletin , Volume 25 , Issue 6: Defects and Diffusion in Silicon Processing , June 2000 , pp. 39 - 44
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Copyright © Materials Research Society 2000

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