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InGaAs Metal Oxide Semiconductor Devices with Ga2O3(Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS

Published online by Cambridge University Press:  31 January 2011

M. Hong ,
J. Kwo ,
T.D. Lin  and
M.L. Huang
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Abstract

An overview is given on scientific and device advances for InGaAs metal oxide semiconductor heterostructures and inversion channel metal oxide semiconductor field-effect transistors (MOSFETs), with emphasis on results using ultrahigh vacuum-deposited Ga2O3(Gd2O3) [GGO] as high-κ dielectrics. Regardless of the approaches used to deposit high-κ dielectrics on InGaAs, critical material and electrical parameters of fabricating inversion channel InGaAs MOSFETs must be ready for complementary MOS technology beyond the 16-nm node, and some of these parameters have been achieved. These parameters include low interfacial density of states; low electrical leakage currents; high-temperature (800–900°C) thermal stability for high-κ dielectrics/InGaAs heterostructures, where the amorphous oxide structure and atomically smooth and sharp interfaces are retained; and oxide scalability with a capacitance equivalent thickness of ≤1 nm. Interfacial chemical properties and band parameters, which are important for device design in the high κs/InGaAs, have been thoroughly studied. Representative enhancement-mode InGaAs MOSFETs are compared and correlated with the interfacial structures. Deposition methods and electrical characteristics of high-κ dielectrics on InGaA are discussed. The inversion channel InGaAs MOSFETs of 0.4–1.0 μm gate length have exhibited excellent device performance in terms of drain current and transconductance.

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Type
Research Article
Information
MRS Bulletin , Volume 34 , Issue 7: Ultimate Scaling of CMOS Logic Devices with Ge and III—V Materials , July 2009 , pp. 514 - 521
Copyright
Copyright © Materials Research Society 2009

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