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Electronic Properties of Inorganic and Organic Semiconductors and Their Application to National Security Needs

Published online by Cambridge University Press:  31 January 2011

Darryl L. Smith
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Abstract

The following article is based on the plenary presentation given by Darryl L.Smith of Los Alamos National Laboratory on December 1, 2003, at the Materials Research Society Fall Meeting in Boston.The presentation contrasted the electronic structure of inorganic semiconductors with that of organic semiconductors, examined how the differences in electronic structure lead to complementary physical properties, and discussed applications of these materials—including infrared detectors and sources, gamma-ray detectors, and chemical/biological sensors—that are of interest to issues of national security.

Keywords

electronic structureinorganicnational securityorganicpolymerssemiconductors

Information

Type
Research Article
Information
MRS Bulletin , Volume 29 , Issue 9 , September 2004 , pp. 647 - 652
Copyright
Copyright © Materials Research Society 2004

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References

1For example, see Ashcroft, N.W. and Mermin, N.D.Solid State Physics (Harcourt, Fort Worth, 1976).Google Scholar
2Awschalom, D.D.Loss, D. and Samarth, N. eds., Semiconductor Spintronics and Quantum Computing (Springer, Berlin, 2002).CrossRefGoogle Scholar
3Bronold, F.X.Saxena, A. and Smith, D.L. in Solid State Physics, Vol.58, edited by Ehrenreich, H. and Spaepen, F. (Elsevier, Amsterdam, 2004) p.73.Google Scholar
4Smith, D.L. and Mailhiot, C.Rev. Mod. Phys. 62 (1990) p.173.CrossRefGoogle Scholar
5Sze, S.M.Physics of Semiconductor Devices, 2nd ed. (John Wiley & Sons, New York, 1981).Google Scholar
6Greenham, N.C. and Friend, R.H. in Solid State Physics, Vol. 49, edited by Ehrenreich, H. and Spaepen, F. (Academic, New York, 1995) p.1.Google Scholar
7Campbell, I.H. and Smith, D.L. in Solid State Physics, Vol. 55, edited by Ehrenreich, H. and Spaepen, F. (Academic, New York, 2001) p.1.Google Scholar
8Reine, M.B.Sood, A.K. and Tredwell, T.J.Semicond. Semimet. 18 (1981) p.201.CrossRefGoogle Scholar
9Smith, D.L. and Mailhiot, C.J. Appl. Phys. 62 (1987) p.2545.CrossRefGoogle Scholar
10Knoll, G.F.Radiation Detection and Measurement, 3rd ed. (John Wiley & Sons, New York, 2000).Google Scholar
11Crone, B.Dodabalapur, A.Gelperin, A, Torsi, L.Katz, H.E.Lovinger, A.J. and Bao, Z., Appl. Phys. Lett. 78 (2001) p.2229.CrossRefGoogle Scholar