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Atomic-Level Control during Film Growth under Highly Kinetically Constrained Conditions: H Mediation and Ultrahigh Doping during Si1–X Gex Gas-Source Epitaxy

Published online by Cambridge University Press:  19 April 2013

J.E. Greene
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Extract

We are living in the golden era of materials science. To cite but one example, consider the field of thin-film physics. Crystal growers have been moving inexorably closer to being able to deposit layers and hence to control film properties on an atom-by-atom basis. We are nearing an era in which it will be possible to deposit “designer” materials with a specified set of properties.

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Research Article
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MRS Bulletin , Volume 26 , Issue 10 , October 2001 , pp. 777 - 789
Copyright
Copyright © Materials Research Society 2001

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