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Molecular Dynamics Simulation of Epitaxial Growth

Published online by Cambridge University Press:  29 November 2013

Ivan K. Schuller
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The growth of thin films has been instrumental in the study of many areas of material science, physics, metallurgy, and chemistry and is an important ingredient in the development of many devices. Although experimental studies have been extensively pursued for many years, theoretical studies have only been performed using model calculations which rely on a number of unknown parameters a priori. Only recently have attempts been made to understand thin film growth using realtime numerical simulation. The main reason for the recent increase of such studies is the development of computers capable of tackling a problem of the magnitude required to understand thin film growth. The phenomena present in thin film growth occur for systems containing many particles (e.g., columnar growth) and long relaxation times, which strain the capabilities presently available in modern supercomputers. Further increases in computational power might bring a number of important problems within reach and improve our understanding of thin film growth at the microscopic level.

I will present a number of epitaxial growth studies we have performed using molecular dynamics (MD) techniques. I will show that a number of properties predicted by these calculations are in good agreement with experimental observations. These include the microcrystalline and epitaxial growth of metal films, the growth of amorphous films in mixtures of metals, and the vapor phase growth of silicon. Finally, I will outline several important studies yet to be implemented.

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Type
Deposition Processes
Information
MRS Bulletin , Volume 13 , Issue 11 , November 1988 , pp. 23 - 28
Copyright
Copyright © Materials Research Society 1988

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References

1. See for instance, Epitaxial Growth, edited by Matthews, J.W., (Academic Press, New York, 1975).Google Scholar
2. See for instance, Baskes, M., Daw, M., Dodson, B., and Foiles, S., MRS Bulletin 13 (2) (1988) p. 28.CrossRefGoogle Scholar
3. See for instance, Interfaces, Superlattices and Thin Films, edited by Dow, J.D. and Schuller, I.K. (Mater. Res. Soc. Symp. Proc. 77, Pittsburgh, PA, 1987).Google Scholar
4.Rahman, A., Phys. Rev. 136 (1964) p. A405.CrossRefGoogle Scholar
5.Car, R. and Parinello, M., Phys. Rev. Lett. 55 (1985) p. 2471.CrossRefGoogle Scholar
6.Leamy, H.J., Gilmer, G.H., and Dirks, A.G. in Current Topics in Materials Science, Vol. 6, edited by Kaldis, E. (North-Holland, Amsterdam, 1980) p. 309.Google Scholar
7.Stillinger, F.H. and Weber, T.A., Phys. Rev. B 31 (1985) p. 5262.CrossRefGoogle Scholar
8.Daw, M.S. and Baskes, M.I., Phys. Rev. B 29 (1984) p. 6443.CrossRefGoogle Scholar
9.Schneider, M., Rahman, A., and Schuller, I.K., Phys. Rev. Lett. 55 (1985) p. 604.CrossRefGoogle Scholar
10.Buckel, W. and Hilsch, R., Z. Phys. 138 (1954) p. 109.CrossRefGoogle Scholar
11. See for instance, Hansen, M., Constitution of Binary Alloys (McGraw-Hill Co., New York, 1958) and supplements.CrossRefGoogle Scholar
12.Schneider, M., Rahman, A. and Schuller, I.K., Phys. Rev. B 34 (1986) p. 1643.Google Scholar
13. See for instance, Glessen, B.C. in Proc. 4th Int. Conf. on Rapidly Quenched Metals, Vol. 1, edited by Masumoto, T. and Suzuki, K. (Japan Inst. Metals, Sendai, 1982) p. 213.Google Scholar
14.Egami, T. and Waseda, Y., J. Non-Cryst. Sol. 64 (1984) p. 113.CrossRefGoogle Scholar
15.Schneider, M., Schuller, I.K., and Rahman, A., Phys. Rev. B 36 (1987) p. 1340.CrossRefGoogle Scholar
16.Biswas, R., Grest, G.S., and Soukoulis, C.M., Phys. Rev. B (in press).Google Scholar