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X-ray quantitative analysis of the phases developed upon air annealing of ZnSe, CdSe, and CdS semiconductors

Published online by Cambridge University Press:  05 March 2012

Z. K. Heiba
Z. K. Heiba*
Affiliation:
National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310
*
a)On leave from Physics Department, Faculty of Science, Ain Shams University, Cairo, Egypt. Electronic mail: zein@magnet.fsu.edu or Zein_KH@hotmail.com
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Abstract

The phases developed upon annealing of ZnSe, CdSe, and CdS semiconductors in air are investigated applying X-ray qualitative and quantitative phase analysis. The compositions of the thermally grown oxides over the 373–773 K temperature range are found to be ZnO and ZnSeO3 for ZnSe, CdSeO3 for CdSe and CdSO4 and Cd3O2SO4 for CdS. The percentage phase abundance of each phase is determined at each temperature applying a standardless method. At all temperatures, the oxides are predominantly ZnO with about 10% ZnSeO3 at 773 K in case of ZnSe and CdSO4 with about 9% Cd3O2SO4 at 773 K in case of CdS. The rate of oxidation with temperature is found to be nonlinear for the three chalcogenides. CdS is found to be more resistible for oxidation than CdSe and ZnSe.

Keywords

zinc and cadmium chalcogenidessemiconductor oxidationX-ray quantitative analysis

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Type
Technical Articles
Information
Powder Diffraction , Volume 17 , Issue 3 , September 2002 , pp. 191 - 195
Copyright
Copyright © Cambridge University Press 2002

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