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DLTS study of deep centers created by Ar-ion bombardment in n- and p-type MBE AlGaAs

Published online by Cambridge University Press:  15 July 2004

M. Kaniewska ,
J. Sadowski  and
M. Guziewicz
M. Kaniewska*
Affiliation:
Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
J. Sadowski
Affiliation:
Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland Niels Bohr Institute, Universitetsparken 5, 2100 Copenhagen, Denmark
M. Guziewicz
Affiliation:
Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
*
kaniew@ite.waw.pl
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Abstract

The thermal emission rate of dominant traps in molecular beam epitaxial n- and p-type AlGaAs subjected to Ar-ion beam etching has been studied by deep level transient spectroscopy. Emission signatures were determined and compared with results obtained by other authors for irradiation induced and grown-in defects in GaAs and AlGaAs. The most significant result of this study is the observation that the process-induced defects in n- as well as p-type AlGaAs exhibit emission signatures, which are characteristic of native defects found in GaAs. The effect is discussed in terms of a compensation effect and related band bending.

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